Terahertz Emission from the Surfaces of InAs and Other Narrow-Gap Semiconductors

• Authors: R. Adomavičius , A. Krotkus , G. Molis , A. Urbanowicz , V. Malevich
• Languages of publication: EN

Abstracts

EN

THz pulses were used to investigate carrier dynamics in narrow-gap semiconductors. The measurement of the optically induced THz pulse absorption transients provided important insights into electron energy relaxation in the conduction band. In the second set of experiments, THz generation from the surfaces of various semiconductors was studied and compared. It was found that the most efficient THz emitters are semiconductors with a narrow band gap, large intervalley separation in the conduction band, and low nonparabolicity of the main valley.

Keywords

EN

42.65.Re; 07.57.Hm; 78.47.-p; 72.30.+q

Discipline

• 78.47.-p: Spectroscopy of solid state dynamics
• 07.57.Hm: Infrared, submillimeter wave, microwave, and radiowave sources(see also 42.72.Ai Infrared sources in optics)
• 42.65.Re: Ultrafast processes; optical pulse generation and pulse compression(for ultrafast spectroscopy, see 78.47.J-; for ultrafast magnetization dynamics, see 75.78.Jp)
• 72.30.+q: High-frequency effects; plasma effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 859-862

Dates

published

2008-03

received

2007-08-26

Contributors

author

R. Adomavičius

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

A. Krotkus

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

G. Molis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

A. Urbanowicz

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

V. Malevich

• IB.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Nezalezhnasti Av. 68, 220072, Minsk, Belarus

References

• 1. A. Krotkus, R. Adomavičius, V.L. Malevich, Proc. SPIE 6257, 62570N (2005)
• 2. M.C. Beard, G.M. Turner, C.A. Schmuttenmaer, J. Appl. Phys. 90, 5915 (2001)
• 3. R. Adomavičius, G. Molis, A. Krotkus, V. Sirutkaitis, Appl. Phys. Lett. 87, 261101 (2005)
• 4. S.C. Howells, S.D. Herrera, L.A. Schlie, Appl. Phys. Lett. 65, 2946 (1994)
• 5. A. Krotkus, R. Adomavičius, G. Molis, A. Urbanowicz, H.J. Eusebe, J. Appl. Phys. 96, 4006 (2004)

Identifiers

DOI

10.12693/APhysPolA.113.859