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2008 | 113 | 3 | 859-862
Article title

Terahertz Emission from the Surfaces of InAs and Other Narrow-Gap Semiconductors

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EN
Abstracts
EN
THz pulses were used to investigate carrier dynamics in narrow-gap semiconductors. The measurement of the optically induced THz pulse absorption transients provided important insights into electron energy relaxation in the conduction band. In the second set of experiments, THz generation from the surfaces of various semiconductors was studied and compared. It was found that the most efficient THz emitters are semiconductors with a narrow band gap, large intervalley separation in the conduction band, and low nonparabolicity of the main valley.
Keywords
Contributors
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
  • IB.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Nezalezhnasti Av. 68, 220072, Minsk, Belarus
References
  • 1. A. Krotkus, R. Adomavičius, V.L. Malevich, Proc. SPIE 6257, 62570N (2005)
  • 2. M.C. Beard, G.M. Turner, C.A. Schmuttenmaer, J. Appl. Phys. 90, 5915 (2001)
  • 3. R. Adomavičius, G. Molis, A. Krotkus, V. Sirutkaitis, Appl. Phys. Lett. 87, 261101 (2005)
  • 4. S.C. Howells, S.D. Herrera, L.A. Schlie, Appl. Phys. Lett. 65, 2946 (1994)
  • 5. A. Krotkus, R. Adomavičius, G. Molis, A. Urbanowicz, H.J. Eusebe, J. Appl. Phys. 96, 4006 (2004)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n317kz
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