On Oscillating Carrier Dynamics in Highly Excited InP:Fe Crystals

• Authors: L. Subačius , A. Kadys , K. Jarašiūnas , P. Kamiński
• Languages of publication: EN

Abstracts

EN

The numerical analysis and experimental data on time-resolved four-wave mixing confirmed a novel origin of oscillations in subnanosecond carrier dynamics in highly excited InP:Fe crystals. The effect was attributed to simultaneous presence of electron and hole gratings, which drift in the space charge field and contribute constructively or destructively to refractive index modulation in time domain.

Keywords

EN

71.55.Eq; 72.20.Jv

Discipline

• 71.55.Eq: III-V semiconductors
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 855-858

Dates

published

2008-03

received

2007-08-26

Contributors

author

L. Subačius

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

A. Kadys

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9-3, LT-10222, Vilnius, Lithuania

author

K. Jarašiūnas

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9-3, LT-10222, Vilnius, Lithuania

author

P. Kamiński

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

References

• 1. D. Verstraeten, M.L. Hellin, Ph.L. Lemaire, A. Kadys, M. Sudzius, K. Jarasiunas, in: Photorefractive Effects, Materials, and Devices, Eds. G. Zhang, D. Kip, D. Nolte, J.J. Xu, OSA TOPS 99, 255 (2005)
• 2. A. Kadys, M. Sudžius, K. Jarašiūnas, L. Mao, N. Sun, Mater. Sci. Eng. B 133, 136 (2006)
• 3. A. Kadys, L. Subačius, R. Aleksiejūnas, K. Jarašiūnas, Proc. SPIE 6595, 659615 (2007)

Identifiers

DOI

10.12693/APhysPolA.113.855