Double Injection Current Transients in a-Si:H

• Authors: N. Nekrašas , K. Genevičius , G. Juška
• Languages of publication: EN

Abstracts

EN

In this work we present results of both computer modelling and experimental studies of double injection current transients in amorphous hydrogenated silicon thin layers.

Keywords

EN

73.50.Gr

Discipline

• 73.50.Gr: Charge carriers: generation, recombination, lifetime, trapping, mean free paths

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 845-849

Dates

published

2008-03

received

2007-08-26

Contributors

author

N. Nekrašas

• Vilnius University, Saulėtekio 9 III k, LT-10222 Vilnius, Lithuania

author

K. Genevičius

• Vilnius University, Saulėtekio 9 III k, LT-10222 Vilnius, Lithuania

author

G. Juška

• Vilnius University, Saulėtekio 9 III k, LT-10222 Vilnius, Lithuania

References

• 1. G. Juška, K. Arlauskas, G. Sliaužys, A. Pivrikas, A.J. Mozer, N.S. Sariciftci, M. Scharber, R. Osterbacka, Appl. Phys. Lett. 87, 222110 (2005)
• 2. G. Juška, G. Sliaužys, K. Genevičius, A. Pivrikas, M. Scharber, R. Osterbacka, J. Appl. Phys. 101, 114505 (2007)
• 3. M. Hack, R.A. Street, J. Appl. Phys. 72, 2331 (1992)
• 4. M.A. Lampert, P. Mark, Current Injection in Solids, Academic, New York 1970
• 5. G. Juška, K. Genevičius, G. Sliaužys, N. Nekrašas, R. Osterbacka, J. Non-Cryst. Solids, to be published
• 6. S. Reynolds, V. Smirnov, C. Main, R. Carius, F. Finger, Mater. Res. Soc. Symp. Proc. 762, 327 (2003)

Identifiers

DOI

10.12693/APhysPolA.113.845