Investigation of Optical Nonlinearities and Carrier Dynamics in In-Rich InGaN Alloys

• Authors: S. Nargelas , T. Malinauskas , K. Jarasiunas , E. Dimakis , A. Georgakilas
• Languages of publication: EN

Abstracts

EN

We present experimental studies of nonequilibrium carrier dynamics in InGaN alloys with 70-90% content of In by using picosecond transient grating technique. The observed faster recombination rate in alloys with higher Ga content and formation of a thermal grating via a lattice heating, being more pronounced for layers with larger band gap, indicated that the main reason of the heating is not the excess energy of photons, but the defect density which increases with Ga content. A gradual decrease in carrier lifetime with excitation or with increasing temperature in 50-300 K range point out the role of potential barriers in carrier recombination.

Keywords

EN

78.47.J-; 72.20.Jv

Discipline

• 78.47.J-: Ultrafast spectroscopy (<1>(see also 42.65.Re Ultrafast processes; optical pulse generation and pulse compression; 82.53.Mj Femtosecond probing of semiconductor nanostructures)
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 839-843

Dates

published

2008-03

received

2007-08-26

Contributors

author

S. Nargelas

• Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Sauletekio Av. 9-3, LT-10222 Vilnius, Lithuania

author

T. Malinauskas

• Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Sauletekio Av. 9-3, LT-10222 Vilnius, Lithuania

author

K. Jarasiunas

• Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Sauletekio Av. 9-3, LT-10222 Vilnius, Lithuania

author

E. Dimakis

• Microelectronics Research Group, Physics Department, University of Crete, P.O. Box 2208, 71003 Heraklion, Greece
• IESL, FORTH, P.O. Box 1527, 71110 Heraklion, Greece

author

A. Georgakilas

• Microelectronics Research Group, Physics Department, University of Crete, P.O. Box 2208, 71003 Heraklion, Greece
• IESL, FORTH, P.O. Box 1527, 71110 Heraklion, Greece

References

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• 2. F. Chen, A.N. Cartwright, W.J. Schaff, Phys. Status Solidi A 202, 768 (2005)
• 3. E. Dimakis, E. Iliopoulos, K. Tsagaraki, A. Georgakilas, Appl. Phys. Lett. 86, 133104 (2005)
• 4. J.-L. Farvacque, Z. Bougrioua, I. Moerman, Phys. Rev. B 63, 15202 (2001)
• 5. Z. Bougrioua, M. Azize, B. Beaumont, P. Gibart, T. Malinauskas, K. Neimontas, A. Mekys, J. Storasta, K. Jarasiunas, J. Cryst. Growth 300, 228 (2007)
• 6. R. Intartaglia, B. Maleyre, S. Ruffenach, O. Briot, T. Taliercio, B. Gil, Appl. Phys. Lett. 86, 142104 (2005)

Identifiers

DOI

10.12693/APhysPolA.113.839