Luminescence Decay Kinetics in GaN Studied by Frequency Domain Measurements

• Authors: J. Mickevičius , P. Vitta , G. Tamulaitis , A. Žukauskas , M. Shur , J. Zhang , J. Yang , R. Gaska
• Languages of publication: EN

Abstracts

EN

Carrier dynamics in high-quality GaN epilayer was investigated at two extreme excitation levels. Carrier lifetime under high excitation conditions was estimated by using light-induced transient grating technique. Measurements at extremely low excitation power density were performed by using frequency-domain fluorescence lifetime technique. The study was performed in a wide temperature range from 8 to 300 K. The results revealed the influence of donor-acceptor pair recombination and carrier trapping processes.

Keywords

EN

72.20.Jv; 78.55.Cr

Discipline

• 78.55.Cr: III-V semiconductors
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 833-837

Dates

published

2008-03

received

2007-08-26

Contributors

author

J. Mickevičius

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9-III, LT-10222, Vilnius, Lithuania

author

P. Vitta

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9-III, LT-10222, Vilnius, Lithuania

author

G. Tamulaitis

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9-III, LT-10222, Vilnius, Lithuania

author

A. Žukauskas

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9-III, LT-10222, Vilnius, Lithuania

author

M. Shur

• Department of ECE and CIE, Rensselaer Polytechnic Institute, Troy, NY 12180, USA

author

J. Zhang

• Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, USA

author

J. Yang

• Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, USA

author

R. Gaska

• Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, USA

References

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• 3. R.S. Qhalid Fareed, R. Jain, R. Gaska, M.S. Shur, J. Wu, W. Walukiewicz, M. Asif Khan, Appl. Phys. Lett. 84, 1892 (2004)
• 4. J. Mickevičius, M.S. Shur, R.S.Qhalid Fareed, J.P. Zhang, R. Gaska, G. Tamulaitis, Appl. Phys. Lett. 87, 241918 (2005)
• 5. J.R. Lakowicz, Principles of Fluorescence Spectroscopy, Kluwer Academic, Plenum, New York 1999
• 6. R.Y. Korotkov, M.A. Reshchikov, B.M. Wessels, Physica B 325, 1 (2003)

Identifiers

DOI

10.12693/APhysPolA.113.833