Investigation of Carrier Recombination in Si Heavily Irradiated by Neutrons

• Authors: E. Gaubas , A. Kadys , A. Uleckas , J. Vaitkus
• Languages of publication: EN

Abstracts

EN

Variations of recombination lifetime, with fluence of the reactor neutrons from 10^{12} to 3×10^{16} n/cm^2, in the magnetic field applied Czochralski grown Si samples are examined by the contactless transient techniques of the microwave probed photoconductivity and dynamic gratings. A nearly linear decrease in lifetime from few microseconds to about 200 ps within the examined range of neutron irradiation fluences was obtained. This dependence persists under relatively low (≤80°C) temperature heat treatments. Also, cross-sectional scans of lifetime depth-profiles were examined, which show rather high homogeneity of lifetime values within wafer thickness.

Keywords

EN

61.72.J-; 61.82.Fk; 72.40.+w

Discipline

• 61.72.J-: Point defects and defect clusters
• 72.40.+w: Photoconduction and photovoltaic effects
• 61.82.Fk: Semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 829-832

Dates

published

2008-03

received

2007-08-26

Contributors

author

E. Gaubas

• Vilnius University, Institute of Materials Science and Applied Research, Saulėtekio al. 10, LT-10223 Vilnius, Lithuania

author

A. Kadys

• Vilnius University, Institute of Materials Science and Applied Research, Saulėtekio al. 10, LT-10223 Vilnius, Lithuania

author

A. Uleckas

• Vilnius University, Institute of Materials Science and Applied Research, Saulėtekio al. 10, LT-10223 Vilnius, Lithuania

author

J. Vaitkus

• Vilnius University, Institute of Materials Science and Applied Research, Saulėtekio al. 10, LT-10223 Vilnius, Lithuania

References

• 1. E. Gaubas, Lith. J. Phys. 43, 145 (2003)
• 2. K. Jarasiunas, J. Vaitkus, E. Gaubas, L. Jonikas, R. Pranaitis, L. Subacius, IEEE J. QE QE-22, 1298 (1986)
• 3. C. Claeys, E. Simoen, Radiation Effects in Advanced Semiconductor Materials and Device, Springer, Berlin 2002

Identifiers

DOI

10.12693/APhysPolA.113.829