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2008 | 113 | 3 | 829-832
Article title

Investigation of Carrier Recombination in Si Heavily Irradiated by Neutrons

Content
Title variants
Languages of publication
EN
Abstracts
EN
Variations of recombination lifetime, with fluence of the reactor neutrons from 10^{12} to 3×10^{16} n/cm^2, in the magnetic field applied Czochralski grown Si samples are examined by the contactless transient techniques of the microwave probed photoconductivity and dynamic gratings. A nearly linear decrease in lifetime from few microseconds to about 200 ps within the examined range of neutron irradiation fluences was obtained. This dependence persists under relatively low (≤80°C) temperature heat treatments. Also, cross-sectional scans of lifetime depth-profiles were examined, which show rather high homogeneity of lifetime values within wafer thickness.
Keywords
EN
Publisher

Year
Volume
113
Issue
3
Pages
829-832
Physical description
Dates
published
2008-03
received
2007-08-26
Contributors
author
  • Vilnius University, Institute of Materials Science and Applied Research, Saulėtekio al. 10, LT-10223 Vilnius, Lithuania
author
  • Vilnius University, Institute of Materials Science and Applied Research, Saulėtekio al. 10, LT-10223 Vilnius, Lithuania
author
  • Vilnius University, Institute of Materials Science and Applied Research, Saulėtekio al. 10, LT-10223 Vilnius, Lithuania
author
  • Vilnius University, Institute of Materials Science and Applied Research, Saulėtekio al. 10, LT-10223 Vilnius, Lithuania
References
  • 1. E. Gaubas, Lith. J. Phys. 43, 145 (2003)
  • 2. K. Jarasiunas, J. Vaitkus, E. Gaubas, L. Jonikas, R. Pranaitis, L. Subacius, IEEE J. QE QE-22, 1298 (1986)
  • 3. C. Claeys, E. Simoen, Radiation Effects in Advanced Semiconductor Materials and Device, Springer, Berlin 2002
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n311kz
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