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2008 | 113 | 3 | 825-828
Article title

Electron Charge Noise Minimization in 130 nm CMOS Preamplifiers

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EN
Abstracts
EN
In this paper we present the design aspects for low-power, low-noise CMOS charge sensitive preamplifier that uses a leakage current compensation circuit for use with radiation sensors. The preamplifier has unipolar response with the peaking time of about 45 ns and the gain about 115-145 mV/ke. Equivalent noise charge (ENC) is less than 80 e, when the input charge is 1-20 ke and the sensors capacitance is equal to 30 fF. In this work we present the quality function of the charge sensitive preamplifier, which characterizes best the optimal input transistor width W, with respect to equivalent noise charge and to the power consumptions.
Keywords
EN
Contributors
author
  • Computer Engineering Department, Electronics Faculty, Vilnius Gediminas Technical University, Naugarduko Str. 41-447, LT-03227 Vilnius, Lithuania
author
  • Computer Engineering Department, Electronics Faculty, Vilnius Gediminas Technical University, Naugarduko Str. 41-447, LT-03227 Vilnius, Lithuania
References
  • 1. G. Bardelloni, E. Bertolucci, A.L.J. Boerkamp, D. Calvet, M. Conti, M. Maiorino, P. Russo, J.L. Visschers, IEEE Nuclear Sci. Symp. Med. Imaging Conf., Nuclear Science Symposium Conference Record, IEEE 2000, Volume 2, p. 57
  • 2. V. Barzd─Śnas, R. Navickas, Solid State Phenom. Mechatronic Syst. Mater. MSM 2005 113, 453 (2006)
  • 3. MOSIS, Integrated Circuits Fabrication Service: http://www.mosis.org
  • 4. W. M.C. Sansen, Y.C. Zhong, IEEE Trans. Circuits and Sys. 37, 1375 (1990)
  • 5. F. Krummenacher, Nucl. Instrum. Methods Phys. Res. A 305, 527 (1991)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n310kz
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