Fast Electrical Switching of Thin Manganite Films

• Authors: S. Balevičius , O. Kiprijanovič , V. Stankevič , N. Žurauskienė , A. Česnys , S. Tolvaišienė , A. Abrutis , V. Plaušinaitienė
• Languages of publication: EN

Abstracts

EN

The effects of strong pulsed electric field on the electrical properties of thin epitaxial La_{0.7}Sr_{0.3}MnO_3 films were investigated. The fast electrical switching from high resistance off-state to low resistance on-state was obtained at current densities higher than 10^6 A/cm^2. This current was able to induce an irreversible damage of the sample in the regions at the edges of the electrodes of the film. It was demonstrated that thermal effects are responsible for appearance of delay time and asymmetrical shape of current channel in on-state, however, the fast switching from off- to on-state is a result of electronic effects appearing when critical power is reached in the film.

Keywords

EN

75.47.Lx; 75.47.Gk; 73.50.Fq

Discipline

• 75.47.Gk: Colossal magnetoresistance
• 75.47.Lx: Magnetic oxides
• 73.50.Fq: High-field and nonlinear effects

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 821-824

Dates

published

2008-03

received

2007-08-26

Contributors

author

S. Balevičius

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania
• Vilnius Gediminas Technical University, Saulėtekio 11, Vilnius, Lithuania

author

O. Kiprijanovič

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania

author

V. Stankevič

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania
• Vilnius Gediminas Technical University, Saulėtekio 11, Vilnius Lithuania

author

N. Žurauskienė

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania
• Vilnius Gediminas Technical University, Saulėtekio 11, Vilnius Lithuania

author

A. Česnys

• Vilnius Gediminas Technical University, Saulėtekio 11, Vilnius, Lithuania

author

S. Tolvaišienė

• Vilnius Gediminas Technical University, Saulėtekio 11, Vilnius, Lithuania

author

A. Abrutis

• Vilnius University, Dep. of General and Inorganic Chemistry, Naugarduko 24, Vilnius, Lithuania

author

V. Plaušinaitienė

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania
• Vilnius University, Dep. of General and Inorganic Chemistry, Naugarduko 24, Vilnius, Lithuania

References

• 1. J. Gao, F.X. Hu, Appl. Phys. Lett. 86, 092504 (2005)
• 2. N.Žurauskienė, Thin Solid Films 515, 576 (2006)
• 3. A. Abrutis, V. Plausinaitiene, V. Kubilius, A. Teiserskis, Z. Saltyte, R. Butkute, J.P. Senateur, Thin Solid Films 413, 32 (2002)
• 4. S. Balevičius, N.Žurauskienė, V. Stankevič, P. Cimmperman, S. Keršulis, A. Česnys, S. Tolvaišienė, L.L. Altgilbers, Appl. Phys. Lett. 90, 212503/1 (2007)

Identifiers

DOI

10.12693/APhysPolA.113.821