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Number of results
2008 | 113 | 3 | 815-820
Article title

Terahertz Resonant Detection by Plasma Waves in Nanometric Transistors

Content
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EN
Abstracts
EN
The plasma waves in gated two-dimensional electron gas have a linear dispersion law, similar to the sound waves. The transistor channel is acting as a resonator cavity for the plasma waves, which can reach frequencies in the THz range for a sufficiently short gate length field effect transistors. A variety of possible applications of field effect transistor operating as a THz device were suggested. In particular, it was shown that the nonlinear properties of plasma oscillations can be utilized for THz tunable detectors. During the last few years THz detection related to plasma wave instabilities in nanometer size field effect transistors was demonstrated experimentally. In this work we review our recent experimental results on the resonant plasma wave detection at cryogenic and room temperatures.
Keywords
EN
Year
Volume
113
Issue
3
Pages
815-820
Physical description
Dates
published
2008-03
received
2007-08-26
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n308kz
Identifiers
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