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2008 | 113 | 3 | 811-814
Article title

Si Multidot FETs for Single-Electron Transfer and Single-Photon Detection

Content
Title variants
Languages of publication
EN
Abstracts
EN
Recently, there have been increasing demands for controlling individual electrons, photons, and dopants in developing nm scale Si devices. Our most recent results on Si single-electron nano-devices will be presented. We have demonstrated single-electron transfer in random-tunnel-junctions by a cycle of ac gate bias, detection of photons and detection of individual acceptor ions by Si single-hole transistor.
Keywords
EN
Year
Volume
113
Issue
3
Pages
811-814
Physical description
Dates
published
2008-03
received
2007-08-26
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n307kz
Identifiers
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