Mesoscopic Structures for Microwave-THz Detection

• Authors: A. Sužied.elis , S. Ašmontas , J. Požela , J. Kundrotas , E. Širmulis , J. Gradauskas , A. Kozič , V. Kazlauskaité , T. Anbinderis
• Languages of publication: EN

Abstracts

EN

Properties of microwave detectors of various design on the base of MBE grown GaAs and AlGaAs structures are discussed in this paper: simple asymmetrically shaped structures with heavily doped GaAs and AlGaAs layers of nanometric thickness as well as diodes with two-dimensional electron gas layers. Novel models of the detectors with partially gated two-dimensional electron gas layer as well as with small area GaAs/AlGaAs heterojuction are discussed to demonstrate different ways to increase the voltage sensitivity of the detectors of electromagnetic radiation in GHz-THz frequency range.

Keywords

EN

73.21.Fg; 73.40.Kp; 73.50.Lw; 73.63.Kv

Discipline

• 73.50.Lw: Thermoelectric effects
• 73.21.Fg: Quantum wells
• 73.63.Kv: Quantum dots
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 803-809

Dates

published

2008-03

received

2007-08-26

Contributors

author

A. Sužied.elis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

S. Ašmontas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

J. Požela

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

J. Kundrotas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

E. Širmulis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

J. Gradauskas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

A. Kozič

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

V. Kazlauskaité

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

T. Anbinderis

• Elmika Ltd, Naugarduko Str. 41, 03227 Vilnius, Lithuania

References

• 1. A. Suvžiedėlis, J. Gradauskas, S. Ašmontas, G. Valušis, H.G. Roskos, J. Appl. Phys. 93, 3034 (2003)
• 2. A. Juozapavičius, L. Ardaravičius, A. Sužiedėlis, A. Kozič, J. Gradauskas, J. Kundrotas, D. Seliuta, E.Širmulis, S. Ašmontas, G. Valušis, H.G. Roskos, K. Köhler, Semicond. Sci. Technol. 19, S436 (2004)
• 3. S. Ašmontas, Electrogradient Phenomena in Semiconductors, Mokslas, Vilnius 1984 (in Russian)
• 4. S. Ašmontas, L. Vingelis, A. Olekas, Lithuanian J. Phys. 24, 69 (1983)
• 5. P. O'Connor, A. Dori, Mark Feuer, R. Vounckx, IEEE Trans. Electron Devices ED-34, 765 (1987)
• 6. A. Sužiedėlis, V. Petkun, A. Kozič, V. Kazlauskaitė, A. Čerškus, G. Steikūnas, J. Gradauskas, J. Kundrotas, S. Ašmontas, I. Papsujeva, A. Narkūnas, T. Anbinderis, V. Umansky, H. Shtrikman, Proc. SPIE 6596, 65960N-1 (2007)

Identifiers

DOI

10.12693/APhysPolA.113.803