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2008 | 113 | 3 | 803-809
Article title

Mesoscopic Structures for Microwave-THz Detection

Content
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Languages of publication
EN
Abstracts
EN
Properties of microwave detectors of various design on the base of MBE grown GaAs and AlGaAs structures are discussed in this paper: simple asymmetrically shaped structures with heavily doped GaAs and AlGaAs layers of nanometric thickness as well as diodes with two-dimensional electron gas layers. Novel models of the detectors with partially gated two-dimensional electron gas layer as well as with small area GaAs/AlGaAs heterojuction are discussed to demonstrate different ways to increase the voltage sensitivity of the detectors of electromagnetic radiation in GHz-THz frequency range.
Keywords
Year
Volume
113
Issue
3
Pages
803-809
Physical description
Dates
published
2008-03
received
2007-08-26
References
  • 1. A. Suvžiedėlis, J. Gradauskas, S. Ašmontas, G. Valušis, H.G. Roskos, J. Appl. Phys. 93, 3034 (2003)
  • 2. A. Juozapavičius, L. Ardaravičius, A. Sužiedėlis, A. Kozič, J. Gradauskas, J. Kundrotas, D. Seliuta, E.Širmulis, S. Ašmontas, G. Valušis, H.G. Roskos, K. Köhler, Semicond. Sci. Technol. 19, S436 (2004)
  • 3. S. Ašmontas, Electrogradient Phenomena in Semiconductors, Mokslas, Vilnius 1984 (in Russian)
  • 4. S. Ašmontas, L. Vingelis, A. Olekas, Lithuanian J. Phys. 24, 69 (1983)
  • 5. P. O'Connor, A. Dori, Mark Feuer, R. Vounckx, IEEE Trans. Electron Devices ED-34, 765 (1987)
  • 6. A. Sužiedėlis, V. Petkun, A. Kozič, V. Kazlauskaitė, A. Čerškus, G. Steikūnas, J. Gradauskas, J. Kundrotas, S. Ašmontas, I. Papsujeva, A. Narkūnas, T. Anbinderis, V. Umansky, H. Shtrikman, Proc. SPIE 6596, 65960N-1 (2007)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n306kz
Identifiers
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