Stokes Shift and Band Gap Bowing in In_xGa_{1-x}N (0.060 ≤ x ≤ 0.105) Grown by Metalorganic Vapour Phase Epitaxy

A. Yildiz; F. Dagdelen; Y. Aydogdu; S. Acar; S. Lisesivdin; M. Kasap; M. Bosi

doi:10.12693/APhysPolA.113.731

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Acta Physica Polonica A

2008 | 113 | 2 | 731-739

Article title

Stokes Shift and Band Gap Bowing in In_xGa_{1-x}N (0.060 ≤ x ≤ 0.105) Grown by Metalorganic Vapour Phase Epitaxy

Authors

A. Yildiz , F. Dagdelen , Y. Aydogdu , S. Acar , S. Lisesivdin , M. Kasap , M. Bosi

Content

http://przyrbwn.icm.edu.pl/APP/PDF/113/a113z212.pdf [remote]

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Abstracts

We presented the results of electrical and optical studies of the properties of In_xGa_{1-x}N epitaxial layers (0.060≤x≤0.105) grown by metalorganic vapour phase epitaxy. Resistivity and Hall effect measurements of the samples were carried out at room temperature. Optical properties of the samples were characterized by photoluminescence and optical absorption spectroscopy. The comparison between the photoluminescence and the optical absorption measurements gives the Stokes shift. We explained the observed Stokes shift in terms of Burstein-Moss effect. The band gap versus composition plot for In_xGa_{1-x}N alloys is well fitted with a bowing parameter of≈3.6 eV.

Keywords

73.61.-r 78.20.-e 78.40.Fy 78.55.-m

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

2008

Volume

113

Issue

Pages

731-739

Physical description

Dates

published

2008-02

received

2007-07-16

(unknown)

2007-12-07

References

1. T. Mukai, K. Takekawa, S. Nakamura, Jpn. J. Appl. Phys. 37, L839 (1998)
2. S. Nakamura, G. Fasol, The Blue Laser Diode, Springer, Berlin 1997, p. 133
3. Y.K. Su, C.Y. Zung, F.S. Juang, S.J. Chang, J.K. Sheu, Jpn. J. Appl. Phys. 40, 2996 (2001)
4. G. Simin, X. Hu, A. Tarakji, J. Zhang, A. Koudymov, S. Saygi, J. Yang, A. Khan, M.S. Shur, R. Gaska, Jpn. J. Appl. Phys. 40, L1142 (2001)
5. M.D. McCluskey, C.G. Van de Walle, C.P. Master, L.T. Romano, N.M. Johnson, Appl. Phys. Lett. 72, 2725 (1998)
6. T. Ohashi, T. Kouno, M. Kawai, A. Kikuchi, K. Kishino, Phys. Status Solidi A 201, 2850 (2004)
7. L.H. Robins, A.J. Paul, C.A. Parker, J.C. Roberts, S.M. Bedair, E.L. Piner, N.A. El-Masry, MRS Internet J. Nitride Semicond. Res. 4S1, G3.22 (1999)
8. S. Chichibu, T. Azuhata, T. Sota, S. Nakamura, Appl. Phys. Lett. 70, 2822 (1997)
9. S. Nakamura, N. Iwasa, S. Nagahama, Jpn. J. Appl. Phys. 32, L338 (1993)
10. K.P. O'Donnell, Mater. Res. Soc. Symp. 595, W11.26.1 (2000)
11. C.G. Van de Walle, M.D. McCluskey, C.P. Master, L.T. Romano, N.M. Johnson, Mater. Sci. Eng. B 59, 274 (1999)
12. M. Bosi, R. Fornari, J. Cryst. Growth 265, 434 (2004)
13. R.A. Oliver, M.J. Kappers, C.J. Humphreys, G. Andrew, D. Briggs, J. Appl. Phys. 97, 013707 (2005)
14. N.F. Mott, E.A. Davis, Electronic Properties in Non-Crystalline Materials, Clarendon Press, Oxford 1971
15. E. Burstein, Phys. Rev. 93, 632 (1954)
16. T.S. Moss, Proc. Phys. Soc. Lond. B 76, 775 (1954)
17. M. Kim, J.K. Cho, I.H. Lee, S.J. Park, Phys. Status Solidi A 176, 269 (1999)
18. M. Ferhat, J. Furthműller, F. Bechstedt, Appl. Phys. Lett. 80, 1394 (2002)
19. K.J. Lee, T.S. Oh, K.T. Kim, G.M. Yang, K.Y. Lim, Phys. Status Solidi C 3, 1412 (2006)
20. J.D. Beach, H.A. Thani, S. McCray, R.T. Collins, J.A. Turner, J. Appl. Phys. 91, 5190 (1998)
21. S. Srinivasan, F. Bertram, A. Bell, F.A. Ponce, S. Tanaka, H. Omiya, Y. Nakagawa, Appl. Phys. Lett. 80, 550 (2002)
22. W. Shan, W. Walukiewicz, E.E. Haller, B.D. Little, J.J. Song, M.D. McCluskey, N.M. Johnson, Z.C. Feng, M. Schurman, R.A. Stall, J. Appl. Phys. 84, 4452 (1998)
23. Y.T. Moon, D.J. Kim, K.M. Song, I.H. Lee, M.S. Yi, D.Y. Noh, C.J. Choi, T.Y. Seong, S.J. Park, Phys. Status Solidi B 216, 167 (1999)
24. G.M. Diaz, K. Stevens, A. Schwartzman, R. Beresford, J. Cryst. Growth 178, 44 (1997)
25. A.F. Qasrawi, A.M.M. Shukri, Cryst. Res. Technol. 41, 364 (2006)
26. J.I. Pankove, Optical Proccesses in Semiconductors, Prentice-Hall, New Jersey 1971, p. 93
27. C. Sasaki, H. Naito, M. Iwata, H. Kudo, Y. Yamada, T. Taguchi, T. Jyouchi, H. Okagawa, K. Tadatomo, H. Tanaka, J. Appl. Phys. 93, 1642 (2003)
28. W. Shan, B.D. Little, J.J. Song, Z.C. Feng, M. Schurman, R.A. Stall, Appl. Phys. Lett. 69, 3315 (1996)
29. T. Takeuchi, S. Sota, M. Katsurgawa, M. Komori, H. Takeuchi, H. Amano, I. Akasaki, Jpn. J. Appl. Phys. 36, L382 (1997)
30. J.L. Reverchon, F. Huet, M.A. Poisson, J.Y. Duboz, B. Damilano, N. Grandjean, J. Massies, Mater. Sci. Eng. B 82, 197 (2001)

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Publication order reference

YADDA identifier

bwmeta1.element.bwnjournal-article-appv113n212kz

Identifiers

DOI

10.12693/APhysPolA.113.731