Stokes Shift and Band Gap Bowing in In_xGa_{1-x}N (0.060 ≤ x ≤ 0.105) Grown by Metalorganic Vapour Phase Epitaxy

• Authors: A. Yildiz , F. Dagdelen , Y. Aydogdu , S. Acar , S. Lisesivdin , M. Kasap , M. Bosi
• Languages of publication: EN

Abstracts

EN

We presented the results of electrical and optical studies of the properties of In_xGa_{1-x}N epitaxial layers (0.060≤x≤0.105) grown by metalorganic vapour phase epitaxy. Resistivity and Hall effect measurements of the samples were carried out at room temperature. Optical properties of the samples were characterized by photoluminescence and optical absorption spectroscopy. The comparison between the photoluminescence and the optical absorption measurements gives the Stokes shift. We explained the observed Stokes shift in terms of Burstein-Moss effect. The band gap versus composition plot for In_xGa_{1-x}N alloys is well fitted with a bowing parameter of≈3.6 eV.

Keywords

EN

73.61.-r; 78.20.-e; 78.40.Fy; 78.55.-m

Discipline

• 73.61.-r: Electrical properties of specific thin films(for optical properties of thin films, see 78.20.-e and 78.66.-w; for magnetic properties of thin films, see 75.70.-i)
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
• 78.40.Fy: Semiconductors

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 2
• Pages: 731-739

Dates

published

2008-02

received

2007-07-16

(unknown)

2007-12-07

Contributors

author

A. Yildiz

• Department of Physics, Faculty of Science and Arts, Ahi Evran University, Asikpasa Kampusu, 40040 Kirsehir, Turkey

author

F. Dagdelen

• Department of Physics, Faculty of Science and Arts, Firat University, 23169 Elazig, Turkey

author

Y. Aydogdu

• Department of Physics, Faculty of Science and Arts, Firat University, 23169 Elazig, Turkey

author

S. Acar

• Department of Physics, Faculty of Science and Arts, University of Gazi, Teknikokular, 06500 Ankara, Turkey

author

S. Lisesivdin

• Department of Physics, Faculty of Science and Arts, University of Gazi, Teknikokular, 06500 Ankara, Turkey

author

M. Kasap

• Department of Physics, Faculty of Science and Arts, University of Gazi, Teknikokular, 06500 Ankara, Turkey

author

M. Bosi

• CNR-IMEM Institute, Area delle Science 37/A, 43010 Fontanini, Parma, Italy

References

• 1. T. Mukai, K. Takekawa, S. Nakamura, Jpn. J. Appl. Phys. 37, L839 (1998)
• 2. S. Nakamura, G. Fasol, The Blue Laser Diode, Springer, Berlin 1997, p. 133
• 3. Y.K. Su, C.Y. Zung, F.S. Juang, S.J. Chang, J.K. Sheu, Jpn. J. Appl. Phys. 40, 2996 (2001)
• 4. G. Simin, X. Hu, A. Tarakji, J. Zhang, A. Koudymov, S. Saygi, J. Yang, A. Khan, M.S. Shur, R. Gaska, Jpn. J. Appl. Phys. 40, L1142 (2001)
• 5. M.D. McCluskey, C.G. Van de Walle, C.P. Master, L.T. Romano, N.M. Johnson, Appl. Phys. Lett. 72, 2725 (1998)
• 6. T. Ohashi, T. Kouno, M. Kawai, A. Kikuchi, K. Kishino, Phys. Status Solidi A 201, 2850 (2004)
• 7. L.H. Robins, A.J. Paul, C.A. Parker, J.C. Roberts, S.M. Bedair, E.L. Piner, N.A. El-Masry, MRS Internet J. Nitride Semicond. Res. 4S1, G3.22 (1999)
• 8. S. Chichibu, T. Azuhata, T. Sota, S. Nakamura, Appl. Phys. Lett. 70, 2822 (1997)
• 9. S. Nakamura, N. Iwasa, S. Nagahama, Jpn. J. Appl. Phys. 32, L338 (1993)
• 10. K.P. O'Donnell, Mater. Res. Soc. Symp. 595, W11.26.1 (2000)
• 11. C.G. Van de Walle, M.D. McCluskey, C.P. Master, L.T. Romano, N.M. Johnson, Mater. Sci. Eng. B 59, 274 (1999)
• 12. M. Bosi, R. Fornari, J. Cryst. Growth 265, 434 (2004)
• 13. R.A. Oliver, M.J. Kappers, C.J. Humphreys, G. Andrew, D. Briggs, J. Appl. Phys. 97, 013707 (2005)
• 14. N.F. Mott, E.A. Davis, Electronic Properties in Non-Crystalline Materials, Clarendon Press, Oxford 1971
• 15. E. Burstein, Phys. Rev. 93, 632 (1954)
• 16. T.S. Moss, Proc. Phys. Soc. Lond. B 76, 775 (1954)
• 17. M. Kim, J.K. Cho, I.H. Lee, S.J. Park, Phys. Status Solidi A 176, 269 (1999)
• 18. M. Ferhat, J. Furthműller, F. Bechstedt, Appl. Phys. Lett. 80, 1394 (2002)
• 19. K.J. Lee, T.S. Oh, K.T. Kim, G.M. Yang, K.Y. Lim, Phys. Status Solidi C 3, 1412 (2006)
• 20. J.D. Beach, H.A. Thani, S. McCray, R.T. Collins, J.A. Turner, J. Appl. Phys. 91, 5190 (1998)
• 21. S. Srinivasan, F. Bertram, A. Bell, F.A. Ponce, S. Tanaka, H. Omiya, Y. Nakagawa, Appl. Phys. Lett. 80, 550 (2002)
• 22. W. Shan, W. Walukiewicz, E.E. Haller, B.D. Little, J.J. Song, M.D. McCluskey, N.M. Johnson, Z.C. Feng, M. Schurman, R.A. Stall, J. Appl. Phys. 84, 4452 (1998)
• 23. Y.T. Moon, D.J. Kim, K.M. Song, I.H. Lee, M.S. Yi, D.Y. Noh, C.J. Choi, T.Y. Seong, S.J. Park, Phys. Status Solidi B 216, 167 (1999)
• 24. G.M. Diaz, K. Stevens, A. Schwartzman, R. Beresford, J. Cryst. Growth 178, 44 (1997)
• 25. A.F. Qasrawi, A.M.M. Shukri, Cryst. Res. Technol. 41, 364 (2006)
• 26. J.I. Pankove, Optical Proccesses in Semiconductors, Prentice-Hall, New Jersey 1971, p. 93
• 27. C. Sasaki, H. Naito, M. Iwata, H. Kudo, Y. Yamada, T. Taguchi, T. Jyouchi, H. Okagawa, K. Tadatomo, H. Tanaka, J. Appl. Phys. 93, 1642 (2003)
• 28. W. Shan, B.D. Little, J.J. Song, Z.C. Feng, M. Schurman, R.A. Stall, Appl. Phys. Lett. 69, 3315 (1996)
• 29. T. Takeuchi, S. Sota, M. Katsurgawa, M. Komori, H. Takeuchi, H. Amano, I. Akasaki, Jpn. J. Appl. Phys. 36, L382 (1997)
• 30. J.L. Reverchon, F. Huet, M.A. Poisson, J.Y. Duboz, B. Damilano, N. Grandjean, J. Massies, Mater. Sci. Eng. B 82, 197 (2001)

Identifiers

DOI

10.12693/APhysPolA.113.731