Fabrication of High-Density GaN Nanowires through Ammoniating Ga_2O_3/Nb Films

• Authors: H. Zhuang , B. Li , S. Zhang , X. Zhang , Ch. Xue , D. Wang , J. Shen
• Languages of publication: EN

Abstracts

EN

High-density GaN nanowires were successfully synthesized on Si(111) substrates through ammoniating Ga_2O_3/Nb films under flowing ammonia atmosphere at 950°C. The as-synthesized GaN nanowires are characterized by X-ray diffraction, selected-area-electron diffraction, Fourier transform infrared, scanning electron microscopy, and field-emission transmission electron microscopy. The results show that the synthesized nanowires are single-crystal hexagonal wurtzite GaN with diameters ranging from 30 to 100 nm and lengths up to several microns. The photoluminescence spectra measured at room temperature only exhibit a strong and broad emission peak at 367.8 nm. Finally, the growth mechanism of GaN nanowires is discussed.

Keywords

EN

68.65.-k; 81.05.Ea; 81.15.Cd

Discipline

• 68.65.-k: Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties(for structure of nanoscale materials, see 61.46.-w; for magnetic properties of interfaces, see 75.70.Cn; for superconducting properties, see 74.78.-w; for optical properties, see 78.67.-n; for transport properties, see 73.63.-b; for thermal properties of nanocrystals and nanotubes, see 65.80.-g; for mechanical properties of nanoscale systems, see 62.25.-g)
• 81.15.Cd: Deposition by sputtering
• 81.05.Ea: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 2
• Pages: 723-730

Dates

published

2008-02

received

2007-10-29

Contributors

author

H. Zhuang

• Institute of Semiconductors, Shandong Normal University, Jinan 250014, P.R. China

author

B. Li

• Institute of Semiconductors, Shandong Normal University, Jinan 250014, P.R. China

author

S. Zhang

• Institute of Semiconductors, Shandong Normal University, Jinan 250014, P.R. China

author

X. Zhang

• Institute of Semiconductors, Shandong Normal University, Jinan 250014, P.R. China

author

Ch. Xue

• Institute of Semiconductors, Shandong Normal University, Jinan 250014, P.R. China

author

D. Wang

• Institute of Semiconductors, Shandong Normal University, Jinan 250014, P.R. China

author

J. Shen

• Institute of Semiconductors, Shandong Normal University, Jinan 250014, P.R. China

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Identifiers

DOI

10.12693/APhysPolA.113.723