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2008 | 113 | 2 | 723-730
Article title

Fabrication of High-Density GaN Nanowires through Ammoniating Ga_2O_3/Nb Films

Content
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EN
Abstracts
EN
High-density GaN nanowires were successfully synthesized on Si(111) substrates through ammoniating Ga_2O_3/Nb films under flowing ammonia atmosphere at 950°C. The as-synthesized GaN nanowires are characterized by X-ray diffraction, selected-area-electron diffraction, Fourier transform infrared, scanning electron microscopy, and field-emission transmission electron microscopy. The results show that the synthesized nanowires are single-crystal hexagonal wurtzite GaN with diameters ranging from 30 to 100 nm and lengths up to several microns. The photoluminescence spectra measured at room temperature only exhibit a strong and broad emission peak at 367.8 nm. Finally, the growth mechanism of GaN nanowires is discussed.
Keywords
EN
Year
Volume
113
Issue
2
Pages
723-730
Physical description
Dates
published
2008-02
received
2007-10-29
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n211kz
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