Infrared Reflection of MnTe_2 under High Pressure

• Authors: Y. Mita , Y. Ishida , M. Kobayashi , S. Endo
• Languages of publication: EN

Abstracts

EN

The IR reflection measurements of MnTe_2 were performed at room temperature under various pressures. It is observed that the reflectivity increases at the pressure range of 8-25 GPa and becomes almost constant at the higher pressure. The carrier concentrations obtained from the reflectivity spectra at the highest pressure region are the order of 10^{22} cm^{-3}. Therefore it is concluded that pressure-induced semiconductor-metal transition occurs at the pressure range of 8-25 GPa.

Keywords

EN

71.30.+h; 78.30.-j

Discipline

• 71.30.+h: Metal-insulator transitions and other electronic transitions
• 78.30.-j: Infrared and Raman spectra(for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 1
• Pages: 617-620

Dates

published

2008-01

received

2007-07-09

Contributors

author

Y. Mita

• Graduate School of Engineering Science, Osaka University, Osaka, Japan

author

Y. Ishida

• Graduate School of Engineering Science, Osaka University, Osaka, Japan

author

M. Kobayashi

• Graduate School of Engineering Science, Osaka University, Osaka, Japan

author

S. Endo

• Research Center for Materials Science at Extreme Conditions, Osaka University, Osaka, Japan

References

• 1. K.V. Kaznacheyev, T. Muro, T. Matsushita, T. Iwasaki, Y. Kuwata, H. Harada, S. Suga, H. Ishii, T. Miyahara, T. Mizokawa, A. Fujimori, T. Harada, T. Kanomata, Phys. Rev. B 58, 13491 (1998)
• 2. J.M. Hastings, L.M. Corliss, W. Kunnmann, D. Mukamel, Phys. Rev. B 33, 6326 (1986)
• 3. P. Burlet, E. Ressouche, B. Malaman, R. Welter, J.P. Sanchez, P. Vulliet, Phys. Rev. B 56, 14013 (1997)
• 4. H. Fjellvag, W.A. Grosshans, W. Honle, A. Kjekshus, J. Magn. Magn. Mater. 145, 118 (1995)
• 5. P. Vulliet, J.P. Sanchez, D. Braithwaite, M. Amanowicz, B. Malaman, Phys. Rev. B 63, 184403 (2001)
• 6. Y. Mita, D. Izaki, M. Kobayashi, S. Endo, Phys. Rev. B 71, 100101(R) (2005)
• 7 Y. Akahama, H. Kawamura, J. Appl. Phys. 96, 3748 (2004)

Identifiers

DOI

10.12693/APhysPolA.113.617