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2008 | 113 | 1 | 617-620
Article title

Infrared Reflection of MnTe_2 under High Pressure

Content
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EN
Abstracts
EN
The IR reflection measurements of MnTe_2 were performed at room temperature under various pressures. It is observed that the reflectivity increases at the pressure range of 8-25 GPa and becomes almost constant at the higher pressure. The carrier concentrations obtained from the reflectivity spectra at the highest pressure region are the order of 10^{22} cm^{-3}. Therefore it is concluded that pressure-induced semiconductor-metal transition occurs at the pressure range of 8-25 GPa.
Keywords
EN
Contributors
author
  • Graduate School of Engineering Science, Osaka University, Osaka, Japan
author
  • Graduate School of Engineering Science, Osaka University, Osaka, Japan
author
  • Graduate School of Engineering Science, Osaka University, Osaka, Japan
author
  • Research Center for Materials Science at Extreme Conditions, Osaka University, Osaka, Japan
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n1150kz
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