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Abstracts
A Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts was modelled. The theoretical method combines a tight-binding model and the non-equilibrium Green function technique. Tunnel magnetoresistance as well as current noise of the carbon nanotube field-effect transistor are the main issues addressed in this study. It is shown that the former may exceed 50%, whereas the latter is characterized by the Poissonian Fano factor (F) within the sub-threshold region, and the sub-Poissonian F≈0.5 for elevated gate voltages. Remarkably, reorientation of relative magnetization alignments of the contacts may lead to noticeable changes in the current noise.
Discipline
Journal
Year
Volume
Issue
Pages
521-524
Physical description
Dates
published
2008-01
received
2007-07-09
Contributors
author
- Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań, Poland
References
- 1. Z.H. Xiong, D. Wu, Z. Valy Vardeny, J. Shi, Nature 427, 821 (2004)
- 2. W.J.M. Naber, S. Faez, W.G. van der Wiel, cond-mat/0703455v1
- 3. R. Saito, M.S. Dresselhaus, G. Dresselhaus, Physical Properties of Carbon Nanotubes Imperial College Press, London 1998
- 4. A.P. Graham, G.S. Duesberg, W. Hoenlein, F. Kreupl, M. Liebau, R. Martin, B. Rajasekharan, W. Pamler, R. Seidel, W. Steinhoegl, E. Unger, Appl. Phys. A 80, 1141 (2005)
- 5. Ya.M. Blanter, M. Bűttiker, Phys. Rep. 3361, 00
- 6 K.M. Indlekofer, J. Knoch, J. Appenzeller, Phys. Rev. B 72 125308, 05
- 7 F.G. Pikus, K.K. Likharev, Appl. Phys. Lett. 71, 3661 (1997)
- 8. P. Auth, J.D. Plummer, IEEE El. Dev. Lett. 18, 74 (1997)
- 9. S. Krompiewski, J. Martinek, J. Barnaś, Phys. Rev. B 66, 073412 (2002)
- 10. S. Krompiewski, Semicond. Sci. Technol. 21, S96 (2006)
- 11. Antti-Pekka Jauho, J. Phys., Conf. Series 35, 313 (2006)
- 12. R.K. Lake, R.R. Pandey, cond-mat/0607219
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n1127kz