Theoretical Studies of Tunnel Magnetoresistance and Shot Noise in a Schottky-Barrier Carbon Nanotube Transistor with Ferromagnetic Contacts

• Authors: S. Krompiewski
• Languages of publication: EN

Abstracts

EN

A Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts was modelled. The theoretical method combines a tight-binding model and the non-equilibrium Green function technique. Tunnel magnetoresistance as well as current noise of the carbon nanotube field-effect transistor are the main issues addressed in this study. It is shown that the former may exceed 50%, whereas the latter is characterized by the Poissonian Fano factor (F) within the sub-threshold region, and the sub-Poissonian F≈0.5 for elevated gate voltages. Remarkably, reorientation of relative magnetization alignments of the contacts may lead to noticeable changes in the current noise.

Keywords

EN

85.75.Hh; 75.47.De; 42.50.Lc; 73.63.Fg

Discipline

• 85.75.Hh: Spin polarized field effect transistors
• 73.63.Fg: Nanotubes
• 42.50.Lc: Quantum fluctuations, quantum noise, and quantum jumps
• 75.47.De: Giant magnetoresistance

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 1
• Pages: 521-524

Dates

published

2008-01

received

2007-07-09

Contributors

author

S. Krompiewski

• Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.113.521