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2008 | 113 | 1 | 521-524
Article title

Theoretical Studies of Tunnel Magnetoresistance and Shot Noise in a Schottky-Barrier Carbon Nanotube Transistor with Ferromagnetic Contacts

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EN
Abstracts
EN
A Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts was modelled. The theoretical method combines a tight-binding model and the non-equilibrium Green function technique. Tunnel magnetoresistance as well as current noise of the carbon nanotube field-effect transistor are the main issues addressed in this study. It is shown that the former may exceed 50%, whereas the latter is characterized by the Poissonian Fano factor (F) within the sub-threshold region, and the sub-Poissonian F≈0.5 for elevated gate voltages. Remarkably, reorientation of relative magnetization alignments of the contacts may lead to noticeable changes in the current noise.
Keywords
Year
Volume
113
Issue
1
Pages
521-524
Physical description
Dates
published
2008-01
received
2007-07-09
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n1127kz
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