Effect of Nano-SiC Doping on the Superconducting Critical Parameters in MgB_2/Fe Wires and Tapes
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In this paper the results of critical current measurements for MgB_2 wires and tapes in iron sheath with and without nano-SiC doping are presented. We focus on power-in-tube processing technique, using both in situ and ex situ methods. In situ MgB_2 wires and tapes were fabricated from MgH_2 and B or Mg and B powders. The methods such as hydrostatic extrusion and rolling were used. The samples were annealed under high Ar gas pressure (hot isostatic pressing) at 750°C and 1.0 GPa for 40 min. It was found that critical current of MgB_2/Fe superconducting wire or tape with nano-SiC dopant increased in higher magnetic field values in comparison to pure MgB_2. A significant difference of J_c in tapes made by in situ way from MgH_2 and Mg were found.
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