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2008 | 113 | 1 | 303-306
Article title

Thermoelectric Power of CeNi_4Si and YbNi_4Si Compounds

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EN
Abstracts
EN
The thermoelectric power was measured from 4.2 to 300 K for CeNi_4Si and YbNi_4Si. The thermoelectric power was analysed in the framework of the phenomenological resonance model. According to the model the dominant contribution to thermopower is caused by scattering between electrons of a broad s-band and a narrow f-band with the Lorentzian shape. The electron-hole analogy is reflected in the thermoelectric power behaviour of the investigated compounds.
Keywords
EN
Year
Volume
113
Issue
1
Pages
303-306
Physical description
Dates
published
2008-01
received
2007-07-09
References
  • 1. A. Kowalczyk, M. Falkowski, T. Tolinski, G. Chełkowska, Solid State Commun. 1395, 06
  • 2 (20J. Sakurai, T. Takagi, S. Taniguchi, T. Kuwai, Y. Isikawa, J.L. Tholence, . J. Phys. Soc. Jpn. ) 65, Suppl. B, 49 (1996)
  • 3. F. Steglich, C.D.C.D. Bredl, M. Loewenhaupt, K.D. Schotte, J. Phys. Colloque 40, C5-301 (1979)
  • 4. W.N. Kang, Mu-Yong Choi, Phys. Rev. B 42, 2573 (1990)
  • 5. U. Gottwick, K. Gloos, S. Horn, F. Steglich, N. Grewe, J. Magn. Magn. Mater. 47&48, 536 (1985)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n1074kz
Identifiers
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