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2008 | 113 | 1 | 35-38
Article title

Spin Torque in Semiconductor Single Planar Tunnel Junctions

Content
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EN
Abstracts
EN
Transport in a single planar tunnel junction with electrodes made of a ferromagnetic semiconductor is analyzed theoretically in the zero- -temperature limit. Tunneling current and both (in-plane and out-of-plane) components of the spin torque exerted on one of the ferromagnetic electrodes are determined as a function of the angle\thet a between magnetic moments of the electrodes. The influence of the bias voltage and spin splitting of the electron band (in both electrodes) on the spin torque components is analyzed numerically.
Keywords
EN
Contributors
  • Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
author
  • Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland
  • Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Poland
  • Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
References
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  • 3. D. Chiba, Y. Sato, T. Kita, F. Matsukura, H. Ohno, Phys. Rev. Lett. 93, 216602 (2004); M. Elsen, O. Boulle, J. -M. George, H. Jaffrès, R. Mattana, V. Cros, A. Fert, A. Lemaitre, R. Giraud, G. Faini, Phys. Rev. B 73, 035303 (2006)
  • 4. I. Theodonis, N. Kioussis, A. Kalitsov, M. Chshiev, W. H. Butler, Phys. Rev. Lett. 97, 237205 (2006)
  • 5. M. Wilczyński, J. Barnaś, Acta Phys. Pol. A 97, 443 (2000)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n1008kz
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