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Abstracts
Here we present the domain wall dynamics in FeNi-based microwires with positive magnetostriction. Two different ranges were found which differs by the measured domain wall mobility. At low fields, the domain wall dynamics exhibit small mobility, whereas at higher field the domain wall mobility increases. The difference in the two regimes of the domain wall dynamics is treated in terms of the different domain wall structure. At low fields, the transversal domain wall is expected, with low domain wall mobility. At high field, the vortex-type domain wall with high domain wall mobility is created.
Discipline
Journal
Year
Volume
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Pages
7-10
Physical description
Dates
published
2008-01
received
2007-07-09
Contributors
author
- Inst. Phys., Fac. UPJS, Park Angelinum 9, 041 54 Kosice, Slovakia
author
- Inst. Phys., Fac. UPJS, Park Angelinum 9, 041 54 Kosice, Slovakia
author
- Inst. Phys., Fac. UPJS, Park Angelinum 9, 041 54 Kosice, Slovakia
author
- Dpto. Fis. Mater., Fac. Quimica, UPV/EHU, 1072, 20080, San Sebastian, Spain
author
- MFTI, Kishinev, Moldova
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n1001kz