Domain Wall Dynamics in Amorphous Microwires

• Authors: K. Richter , Y. Kostyk , R. Varga , A. Zhukov , V. Larin
• Languages of publication: EN

Abstracts

EN

Here we present the domain wall dynamics in FeNi-based microwires with positive magnetostriction. Two different ranges were found which differs by the measured domain wall mobility. At low fields, the domain wall dynamics exhibit small mobility, whereas at higher field the domain wall mobility increases. The difference in the two regimes of the domain wall dynamics is treated in terms of the different domain wall structure. At low fields, the transversal domain wall is expected, with low domain wall mobility. At high field, the vortex-type domain wall with high domain wall mobility is created.

Keywords

EN

75.60.Ej; 75.60.Jk

Discipline

• 75.60.Jk: Magnetization reversal mechanisms
• 75.60.Ej: Magnetization curves, hysteresis, Barkhausen and related effects(for hysteresis in ferroelectricity, see 77.80.Dj)

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 1
• Pages: 7-10

Dates

published

2008-01

received

2007-07-09

Contributors

author

K. Richter

• Inst. Phys., Fac. UPJS, Park Angelinum 9, 041 54 Kosice, Slovakia

author

Y. Kostyk

• Inst. Phys., Fac. UPJS, Park Angelinum 9, 041 54 Kosice, Slovakia

author

R. Varga

• Inst. Phys., Fac. UPJS, Park Angelinum 9, 041 54 Kosice, Slovakia

author

A. Zhukov

• Dpto. Fis. Mater., Fac. Quimica, UPV/EHU, 1072, 20080, San Sebastian, Spain

author

V. Larin

• MFTI, Kishinev, Moldova

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Identifiers

DOI

10.12693/APhysPolA.113.7