Spin-Dependent Phenomena in Magnetoelectronic Devices

• Authors: J. BarnaŚ , M. Gmitra , W. Rudziński , M. Wawrzyniak , V. Dugaev , H. Kunert
• Languages of publication: EN

Abstracts

EN

Spin effects in electronic transport properties of artificial magnetic structures, like nanopillar spin valves, tunnel junctions, mesoscopic double-barrier junctions (single-electron transistors) are briefly discussed. Two classes of spin effects are distinguished; i.e. magnetoresistance phenomena due to magnetization rotation, and current-induced magnetic switching and magnetic dynamics.

Keywords

EN

75.60.Ch; 75.70.Cn; 75.70.Pa

Discipline

• 75.60.Ch: Domain walls and domain structure(for magnetic bubbles and vortices, see 75.70.Kw)
• 75.70.Cn: Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 6
• Pages: 1259-1265

Dates

published

2007-12

received

2007-07-04

Contributors

author

J. BarnaŚ

• Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland
• Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Poland

author

M. Gmitra

• Department of Theoretical Physics and Astrophysics, P.J. Šafárik University, Park Angelinum 9, 040 01 KoŠice, Slovak Republic

author

W. Rudziński

• Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland

author

M. Wawrzyniak

• Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland

author

V. Dugaev

• Department of Physics and Applied Physics, Rzeszów University of Technology, Al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland

author

H. Kunert

• Department of Physics, University of Pretoria, 0002 Pretoria, Republic of South Africa

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Identifiers

DOI

10.12693/APhysPolA.112.1259