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Article title
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Abstracts
Spin effects in electronic transport properties of artificial magnetic structures, like nanopillar spin valves, tunnel junctions, mesoscopic double-barrier junctions (single-electron transistors) are briefly discussed. Two classes of spin effects are distinguished; i.e. magnetoresistance phenomena due to magnetization rotation, and current-induced magnetic switching and magnetic dynamics.
Discipline
Journal
Year
Volume
Issue
Pages
1259-1265
Physical description
Dates
published
2007-12
received
2007-07-04
Contributors
author
- Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland
- Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Poland
author
- Department of Theoretical Physics and Astrophysics, P.J. Šafárik University, Park Angelinum 9, 040 01 KoŠice, Slovak Republic
author
- Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland
author
- Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland
author
- Department of Physics and Applied Physics, Rzeszów University of Technology, Al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
author
- Department of Physics, University of Pretoria, 0002 Pretoria, Republic of South Africa
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv112n611kz