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2007 | 112 | 6 | 1259-1265
Article title

Spin-Dependent Phenomena in Magnetoelectronic Devices

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EN
Abstracts
EN
Spin effects in electronic transport properties of artificial magnetic structures, like nanopillar spin valves, tunnel junctions, mesoscopic double-barrier junctions (single-electron transistors) are briefly discussed. Two classes of spin effects are distinguished; i.e. magnetoresistance phenomena due to magnetization rotation, and current-induced magnetic switching and magnetic dynamics.
Keywords
EN
Contributors
author
  • Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland
  • Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Poland
author
  • Department of Theoretical Physics and Astrophysics, P.J. Šafárik University, Park Angelinum 9, 040 01 KoŠice, Slovak Republic
author
  • Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland
author
  • Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland
author
  • Department of Physics and Applied Physics, Rzeszów University of Technology, Al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
author
  • Department of Physics, University of Pretoria, 0002 Pretoria, Republic of South Africa
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv112n611kz
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