Growth of β-Ga_2O_3 Nanorods and Photoluminescence Properties

• Authors: S. Zhang , H. Zhuang , C. Xue , B. Li , J. Shen , D. Wang
• Languages of publication: EN

Abstracts

EN

β-Ga_2O_3 nanorods were successfully fabricated through annealing Ga_2O_3/Mo films deposited on the Si (111) substrate by radio frequency magnetron sputtering technique. The morphology and structure of the as-synthesized nanorods were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-rays spectroscopy. The results show that the formed nanorods are single-crystalline Ga_2O_3 with monoclinic structure. The diameters of nanorods are 200 nm and lengths typically up to several micrometers. A photoluminescence spectrum at room temperature under excitation at 325 nm exhibits two strong blue-light peaks located at about 413.0 nm and 437.5 nm, attributed to the recombination of bound electron-hole exciton in β-Ga_2O_3 single crystal. The growth process of the β-Ga_2O_3 nanorods is probably dominated by conventional vapor-solid mechanism.

Keywords

EN

68.65.-k; 79.60.Jv; 81.15.Cd

Discipline

• 79.60.Jv: Interfaces; heterostructures; nanostructures
• 68.65.-k: Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties(for structure of nanoscale materials, see 61.46.-w; for magnetic properties of interfaces, see 75.70.Cn; for superconducting properties, see 74.78.-w; for optical properties, see 78.67.-n; for transport properties, see 73.63.-b; for thermal properties of nanocrystals and nanotubes, see 65.80.-g; for mechanical properties of nanoscale systems, see 62.25.-g)
• 81.15.Cd: Deposition by sputtering

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 6
• Pages: 1195-1201

Dates

published

2007-12

received

2007-08-24

Contributors

author

S. Zhang

• Institute of Semiconductors, College of Physics and Electronics Shandong Normal University, Jinan 250014, P.R. China

author

H. Zhuang

• Institute of Semiconductors, College of Physics and Electronics Shandong Normal University, Jinan 250014, P.R. China

author

C. Xue

• Institute of Semiconductors, College of Physics and Electronics Shandong Normal University, Jinan 250014, P.R. China

author

B. Li

• Institute of Semiconductors, College of Physics and Electronics Shandong Normal University, Jinan 250014, P.R. China

author

J. Shen

• Institute of Semiconductors, College of Physics and Electronics Shandong Normal University, Jinan 250014, P.R. China

author

D. Wang

• Institute of Semiconductors, College of Physics and Electronics Shandong Normal University, Jinan 250014, P.R. China

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Identifiers

DOI

10.12693/APhysPolA.112.1195