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2007 | 112 | 6 | 1195-1201
Article title

Growth of β-Ga_2O_3 Nanorods and Photoluminescence Properties

Content
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Languages of publication
EN
Abstracts
EN
β-Ga_2O_3 nanorods were successfully fabricated through annealing Ga_2O_3/Mo films deposited on the Si (111) substrate by radio frequency magnetron sputtering technique. The morphology and structure of the as-synthesized nanorods were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-rays spectroscopy. The results show that the formed nanorods are single-crystalline Ga_2O_3 with monoclinic structure. The diameters of nanorods are 200 nm and lengths typically up to several micrometers. A photoluminescence spectrum at room temperature under excitation at 325 nm exhibits two strong blue-light peaks located at about 413.0 nm and 437.5 nm, attributed to the recombination of bound electron-hole exciton in β-Ga_2O_3 single crystal. The growth process of the β-Ga_2O_3 nanorods is probably dominated by conventional vapor-solid mechanism.
Keywords
EN
Contributors
author
  • Institute of Semiconductors, College of Physics and Electronics Shandong Normal University, Jinan 250014, P.R. China
author
  • Institute of Semiconductors, College of Physics and Electronics Shandong Normal University, Jinan 250014, P.R. China
author
  • Institute of Semiconductors, College of Physics and Electronics Shandong Normal University, Jinan 250014, P.R. China
author
  • Institute of Semiconductors, College of Physics and Electronics Shandong Normal University, Jinan 250014, P.R. China
author
  • Institute of Semiconductors, College of Physics and Electronics Shandong Normal University, Jinan 250014, P.R. China
author
  • Institute of Semiconductors, College of Physics and Electronics Shandong Normal University, Jinan 250014, P.R. China
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv112n604kz
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