Optically Pumped Laser Action on Nitride Based Separate Confinement Heterostructures Grown along the (11¯20) Crystallographic Direction

• Authors: H. Teisseyre , M. Szymański , A. Khachapuridze , C. Skierbiszewski , A. Feduniewicz-Żmuda , M. Siekacz , B. Łucznik , G. Kamler , M. Kryśko , T. Suski , P. Perlin , I. Grzegory
• Languages of publication: EN

Abstracts

EN

The intention of this work is to discuss and report on our research on nonpolar laser structures grown on bulk GaN crystal substrates along the (11¯20) nonpolar direction. The main advantages of such nonpolar structures are related to the elimination of the built-in electric fields present in commonly used systems grown along the polar (0001) axis of nitride crystals. We demonstrated the optically pumped laser action on separate confinement heterostructures. Laser action is clearly shown by spontaneous emission saturation, abrupt line narrowing, and strong transversal electric polarization of output light. The lasing threshold was reached at an excitation power density of 260 kW/cm^2 for a 700μm long cavity (at room temperature).

Keywords

EN

42.55.Px; 78.45.+h; 78.66.Fd

Discipline

• 78.45.+h: Stimulated emission(see also 42.55.-f Lasers)
• 78.66.Fd: III-V semiconductors
• 42.55.Px: Semiconductor lasers; laser diodes

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 2
• Pages: 467-472

Dates

published

2007-08

received

2007-06-09

Contributors

author

H. Teisseyre

• Institute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland

author

M. Szymański

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Khachapuridze

• Institute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland

author

C. Skierbiszewski

• Institute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland

author

A. Feduniewicz-Żmuda

• Institute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland

author

M. Siekacz

• Institute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland

author

B. Łucznik

• Institute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland

author

G. Kamler

• Institute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland

author

M. Kryśko

• Institute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland

author

T. Suski

• Institute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland

author

P. Perlin

• Institute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland

author

I. Grzegory

• Institute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland

References

• 1. P. Waltereit, O. Brandt, A. Trampert, H.T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K.H. Ploog, Nature, 406, 865, 2000
• 2. G. Purvis, III-V Review, 18, 26, 2005 and references therein
• 3. S. Christopoulos, G. Baldassarri Hoger von Hogersthal, A.J.D. Grundy, P.G. Lagoudakis, A.V. Kavokin, J.J. Baumberg, G. Christmann, R. Butte, E. Feltin, J.-F. Carlin, N. Grandjean, Phys. Rev. Lett., 98, 126405, 2007
• 4. G. Malpuech, A. Di Carlo, A. Kavokin, J.J. Baumberg, M. Zamfirescu, P. Lugli, Appl. Phys. Lett., 81, 412, 2002
• 5. M.C. Schmidt, K.C. Kim, R.M. Farrell, D.F. Feezell, D.A. Cohen, M. Saito, K. Fujito, J.S. Speck, S.P. DenBaars, S. Nakamura, Jpn. J. Appl. Phys., 46, L190, 2007
• 6. K. Okamoto, H. Ohta, S.F. Chichibu, J. Ichihara, H. Takasu, Jpn. J. Appl. Phys., 46, L187, 2007
• 7. I. Grzegory, S. Krukowski, M. Leszczynski, P. Perlin, T. Suski, S. Porowski, in: Nitride Semiconductors Handbook on Materials and Devices, Eds. P. Ruterana, M. Albrecht, J. Neugabauer, Wiley, Weinheim 2003, p. 1
• 8. P. Alleysson, J. Cibert, G. Feuillet, Le Si Dand, J. Cryst. Growth., 159, 672, 1996
• 9. B. Mroziewicz, M. Bugajski, W. Nakwaski, Physics of Semiconductor Lasers, North Holland, Amsterdam 1991, Ch. 4.1.5
• 10. G.M. Laws, E.C. Larkins, I. Harrison, J. Appl. Phys., 89, 1108, 2001 and references therein
• 11. K. Kondo, M. Ukita, H. Yoshida, Y. Kishita, H. Okuyama, S. Ito, T. Ohata, K. Nakano, A. Ishibashi, J. Appl. Phys., 76, 2621, 1994
• 12. S. Bidnyk, J.B. Lam, B.D. Little, Y.H. Kwon, J.J. Song, G.E. Bulman, H.S. Kong, T.J. Schmidt, Appl. Phys. Lett., 75, 3905, 1999

Identifiers

DOI

10.12693/APhysPolA.112.467