Strain Induced k-Linear Spin Splitting in III-V Semiconductors

• Authors: A. Skierkowski , J. Majewski
• Languages of publication: EN

Abstracts

EN

We present theoretical studies of the linear-k strain induced spin splitting of the conduction band in the zinc-blende semiconductors. The studies are based on ab initio calculations performed within the density functional theory with non-scalar relativistic effects fully taken into account. This permits one to construct effective Hamiltonian for the strain induced linear-k spin splitting of the zinc-blende semiconductors. This Hamiltonian reproduces fully the structure of the strain induced linear-k spin splitting and generalizes previously introduced and commonly used effective Hamiltonian.

Keywords

EN

71.70.Fk; 71.15.Rf; 71.70.Ej; 71.55.Eq

Discipline

• 71.15.Rf: Relativistic effects[see also 31.30.J- Relativistic and quantum electrodynamic (QED) effects in atoms, molecules, and ions]
• 71.55.Eq: III-V semiconductors
• 71.70.Ej: Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
• 71.70.Fk: Strain-induced splitting

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 2
• Pages: 455-460

Dates

published

2007-08

received

2007-06-09

Contributors

author

A. Skierkowski

• Institute of Theoretical Physics, Faculty of Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

J. Majewski

• Institute of Theoretical Physics, Faculty of Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

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Identifiers

DOI

10.12693/APhysPolA.112.455