Extra-Low Temperature Growth of ZnO by Atomic Layer Deposition with Diethylzinc Precursor

• Authors: I. Kowalik , E. Guziewicz , K. Kopalko , S. Yatsunenko , M. Godlewski , A. Wójcik , V. Osinniy , T. Krajewski , T. Story , E. Łusakowska , W. Paszkowicz
• Languages of publication: EN

Abstracts

EN

ZnO thin films were grown on silicon substrate by atomic layer deposition method. We explored double-exchange chemical reaction and used very volatile and reactive diethylzinc as a zinc precursor. These enables us to obtain zinc oxide thin films of high quality at extremely low growth temperature (90-200ºC). The films are polycrystalline as was determined by X-ray diffraction and show flat surfaces with roughness of 1-4 nm as derived from atomic force microscopy measurements. Photoluminescence studies show that an edge emission of excitonic origin is observed even at room temperature for all investigated ZnO layers deposited with the diethylzinc precursor.

Keywords

EN

78.55.Et; 78.66.Hf; 81.15.Kk

Discipline

• 78.66.Hf: II-VI semiconductors
• 78.55.Et: II-VI semiconductors
• 81.15.Kk: Vapor phase epitaxy; growth from vapor phase

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 2
• Pages: 401-406

Dates

published

2007-08

received

2007-06-09

Contributors

author

I. Kowalik

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Guziewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Kopalko

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

S. Yatsunenko

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
• Department of Material Natural Science, College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland

author

A. Wójcik

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

V. Osinniy

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

T. Krajewski

• Department of Material Natural Science, College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland

author

T. Story

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Łusakowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Paszkowicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. S.J. Pearton, D.P. Norton, K. Ip, Y.W. Heo, T. Steiner, Superlattices Microstruct., 34, 3, 2003
• 2. U. Ozgur, Ya.I. Alivov, C. Liu, A. Teke, M. Reshchikov, S. Dogan, V. Avrutin, S.-J. Cho, H. Morkoc, J. Appl. Phys., 98, 041301, 2005
• 3. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, D. Ferrand, Science, 287, 1019, 2000
• 4. A. Wójcik, K. Kopalko, M. Godlewski, E. Guziewicz, R. Jakiela, R. Minikayev, W. Paszkowicz, Appl. Phys. Lett., 89, 051907, 2006
• 5. A. Wójcik, M. Godlewski, E. Guziewicz, K. Kopalko, R. Jakiela, M. Kiecana, M. Sawicki, M. Guziewicz, M. Putkonen, L. Niinisto, Y. Dumont, N. Keller, Appl. Phys. Lett., 90, 082502, 2007
• 6. P. Scherrer, Gottinger Nachrichten, 2, 98, 1918; cf. also Kolloidchemie, Ed. R. Zsigmondy, 3rd ed., Sparner, Leipzig 1920, p. 394

Identifiers

DOI

10.12693/APhysPolA.112.401