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Number of results
2007 | 112 | 2 | 401-406
Article title

Extra-Low Temperature Growth of ZnO by Atomic Layer Deposition with Diethylzinc Precursor

Content
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Languages of publication
EN
Abstracts
EN
ZnO thin films were grown on silicon substrate by atomic layer deposition method. We explored double-exchange chemical reaction and used very volatile and reactive diethylzinc as a zinc precursor. These enables us to obtain zinc oxide thin films of high quality at extremely low growth temperature (90-200ºC). The films are polycrystalline as was determined by X-ray diffraction and show flat surfaces with roughness of 1-4 nm as derived from atomic force microscopy measurements. Photoluminescence studies show that an edge emission of excitonic origin is observed even at room temperature for all investigated ZnO layers deposited with the diethylzinc precursor.
Keywords
EN
Publisher

Year
Volume
112
Issue
2
Pages
401-406
Physical description
Dates
published
2007-08
received
2007-06-09
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Department of Material Natural Science, College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Department of Material Natural Science, College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
References
  • 1. S.J. Pearton, D.P. Norton, K. Ip, Y.W. Heo, T. Steiner, Superlattices Microstruct., 34, 3, 2003
  • 2. U. Ozgur, Ya.I. Alivov, C. Liu, A. Teke, M. Reshchikov, S. Dogan, V. Avrutin, S.-J. Cho, H. Morkoc, J. Appl. Phys., 98, 041301, 2005
  • 3. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, D. Ferrand, Science, 287, 1019, 2000
  • 4. A. Wójcik, K. Kopalko, M. Godlewski, E. Guziewicz, R. Jakiela, R. Minikayev, W. Paszkowicz, Appl. Phys. Lett., 89, 051907, 2006
  • 5. A. Wójcik, M. Godlewski, E. Guziewicz, K. Kopalko, R. Jakiela, M. Kiecana, M. Sawicki, M. Guziewicz, M. Putkonen, L. Niinisto, Y. Dumont, N. Keller, Appl. Phys. Lett., 90, 082502, 2007
  • 6. P. Scherrer, Gottinger Nachrichten, 2, 98, 1918; cf. also Kolloidchemie, Ed. R. Zsigmondy, 3rd ed., Sparner, Leipzig 1920, p. 394
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv112n245kz
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