Influence of Well-Width Fluctuations on the Electronic Structure of GaN/Al_xGa_{1-x}N Multiquantum Wells with Graded Interfaces

• Authors: E. Valcheva , S. Dimitrov , B. Monemar , H. Haratizadeh , P. Persson , H. Amano , I. Akasaki
• Languages of publication: EN

Abstracts

EN

Experimental and computation results based on chemical composition assessment of metal-organic chemical vapour deposition grown undoped GaN/Al_xGa_{1-x}N multiquantum well structures in the low composition limit of x = 0.07 and wide wells demonstrate composition fluctuations in the barrier layers which lead to large-scale nonuniformities and inequivalence of the different wells. As a consequence the experimental photoluminescence spectra at low temperature show a double peak structure indicative of well-width fluctuations by one lattice parameter (2 monolayers).

Keywords

EN

78.55.Cr; 73.20.-r; 73.21.-b; 74.40.+k

Discipline

• 73.20.-r: Electron states at surfaces and interfaces
• 78.55.Cr: III-V semiconductors
• 73.21.-b: Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems(for electron states in nanoscale materials, see 73.22.-f)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 2
• Pages: 395-400

Dates

published

2007-08

received

2007-06-09

Contributors

author

E. Valcheva

• Faculty of Physics, Sofia University, 5 J. Bourchier Blvd, 1164 Sofia, Bulgaria

author

S. Dimitrov

• Faculty of Physics, Sofia University, 5 J. Bourchier Blvd, 1164 Sofia, Bulgaria

author

B. Monemar

• Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden

author

H. Haratizadeh

• Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden

author

P. Persson

• Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden

author

H. Amano

• Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Temkuku, Nagoya 468, Japan

author

I. Akasaki

• Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Temkuku, Nagoya 468, Japan

References

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Identifiers

DOI

10.12693/APhysPolA.112.395