Influence of Well-Width Fluctuations on the Electronic Structure of GaN/Al_xGa_{1-x}N Multiquantum Wells with Graded Interfaces

• Authors: E. Valcheva , S. Dimitrov , B. Monemar , H. Haratizadeh , P. Persson , H. Amano , I. Akasaki
• Languages of publication: EN

Abstracts

EN

Experimental and computation results based on chemical composition assessment of metal-organic chemical vapour deposition grown undoped GaN/Al_xGa_{1-x}N multiquantum well structures in the low composition limit of x = 0.07 and wide wells demonstrate composition fluctuations in the barrier layers which lead to large-scale nonuniformities and inequivalence of the different wells. As a consequence the experimental photoluminescence spectra at low temperature show a double peak structure indicative of well-width fluctuations by one lattice parameter (2 monolayers).

Keywords

EN

78.55.Cr; 73.20.-r; 73.21.-b; 74.40.+k

Discipline

• 73.20.-r: Electron states at surfaces and interfaces
• 78.55.Cr: III-V semiconductors
• 73.21.-b: Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems(for electron states in nanoscale materials, see 73.22.-f)

• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 2
• Pages: 395-400

Dates

published

2007-08

received

2007-06-09

Contributors

author

E. Valcheva

• Faculty of Physics, Sofia University, 5 J. Bourchier Blvd, 1164 Sofia, Bulgaria

author

S. Dimitrov

• Faculty of Physics, Sofia University, 5 J. Bourchier Blvd, 1164 Sofia, Bulgaria

author

B. Monemar

• Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden

author

H. Haratizadeh

• Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden

author

P. Persson

• Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden

author

H. Amano

• Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Temkuku, Nagoya 468, Japan

author

I. Akasaki

• Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Temkuku, Nagoya 468, Japan

References

• 1. F. Bernardini, V. Fiorentini, D. Vanderbilt, Phys. Rev. B, 56, R 10024, 1997
• 2. P. Lefebvre, J. Allegre, B. Gil, H. Mathieu, P. Bigenwald, N. Grandjean, M. Leroux, J. Massies, Phys. Rev. B, 59, 15363, 1999
• 3. A. Hangleiter, J.S. Im, J. Off, F. Scholz, Phys. Status Solidi B, 216, 427, 1999
• 4. F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vezian, N. Grandjean, J. Massies, Phys. Rev. B, 71, 075311, 2005
• 5. S. Yamaguchi, M. Kosaki, Y. Watanabe, Y. Yukawa, S. Nitta, H. Amano, I. Akasaki, Appl. Phys. Lett., 79, 3062, 2001
• 6. P. Bigenwald, P. Lefebvre, T. Bretagnon, B. Gil, Phys. Status Solidi B, 216, 371, 1999
• 7. B. Monemar, H. Haratizadeh, P.P. Paskov, G. Pozina, P.O. Holtz, J.P. Bergman, S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki, Phys. Status Solidi B, 237, 353, 2003
• 8. H. Haratizadeh, B. Monemar, P.P. Paskov, P.O. Holtz, E. Valcheva, P. Persson, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, Phys. Status Solidi B, 244, 1727, 2007

Identifiers

DOI

10.12693/APhysPolA.112.395