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2007 | 112 | 2 | 395-400
Article title

Influence of Well-Width Fluctuations on the Electronic Structure of GaN/Al_xGa_{1-x}N Multiquantum Wells with Graded Interfaces

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EN
Abstracts
EN
Experimental and computation results based on chemical composition assessment of metal-organic chemical vapour deposition grown undoped GaN/Al_xGa_{1-x}N multiquantum well structures in the low composition limit of x = 0.07 and wide wells demonstrate composition fluctuations in the barrier layers which lead to large-scale nonuniformities and inequivalence of the different wells. As a consequence the experimental photoluminescence spectra at low temperature show a double peak structure indicative of well-width fluctuations by one lattice parameter (2 monolayers).
Keywords
Contributors
author
  • Faculty of Physics, Sofia University, 5 J. Bourchier Blvd, 1164 Sofia, Bulgaria
author
  • Faculty of Physics, Sofia University, 5 J. Bourchier Blvd, 1164 Sofia, Bulgaria
author
  • Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden
  • Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden
author
  • Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden
author
  • Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Temkuku, Nagoya 468, Japan
author
  • Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Temkuku, Nagoya 468, Japan
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv112n244kz
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