Limitations in the Tunability of the Spin Resonance of 2D Electrons in Si by an Electric Current

• Authors: Z. Wilamowski , H. Malissa , M. Glazov , W. Jantsch
• Languages of publication: EN

Abstracts

EN

We analyse the recently observed effect of an in-plane electric current through a Si quantum well on the conduction electron spin resonance. We find that the ratio of resonance shift and current density is independent of temperature and dissipation processes, but the channel current is reduced due to a parallel electric channel in heavily modulation doped samples. The inhomogeneous current distribution results in some broadening of the ESR line width. In high mobility Si/SiGe layers the current induced increase in the electron temperature is considerably larger than the increase in the lattice temperature. The signal amplitude scales with the square of electron mobility.

Keywords

EN

85.75.-d; 73.63.Hs; 75.75.+a; 76.30.-v

Discipline

• 73.63.Hs: Quantum wells
• 85.75.-d: Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
• 76.30.-v: Electron paramagnetic resonance and relaxation(see also 33.35.+r Electron resonance and relaxation in atomic and molecular physics; 87.80.Lg Magnetic and paramagnetic resonance in biological physics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 2
• Pages: 375-379

Dates

published

2007-08

received

2007-06-09

Contributors

author

Z. Wilamowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
• Faculty of Mathematics and Computer Sciences, UWM, Olsztyn, Poland

author

H. Malissa

• Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Austria

author

M. Glazov

• Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Austria
• A.F. Ioffe Physico-Technical Institute RAS, 194021 St.-Petersburg, Russia

author

W. Jantsch

• Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Austria

References

• 1. I. Zutic, J. Fabian, S. Das Sarma, Rev. Mod. Phys., 76, 323, 2004
• 2. Z. Wilamowski, H. Malissa, F. Schaffler, W. Jantsch, Phys. Rev. Lett., 98, 187203, 2007
• 3. Y.A. Bychkov, E.I. Rashba, J. Phys. C, 17, 6039, 1984
• 4. Z. Wilamowski, W. Jantsch, H. Malissa, U. Rossler, Phys. Rev. B, 66, 195315, 2002
• 5. Z. Wilamowski, N. Sandersfeld, W. Jantsch, D. Tobben, F. Schaffler, Phys. Rev. Lett., 87, 026401, 2001
• 6. M.M. Glazov, E.L. Ivchenko, JETP Lett., 75, 403, 2002; Phys. Solid State, 45, 1162, 2003; JETP, 99, 1279, 2004

Identifiers

DOI

10.12693/APhysPolA.112.375