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2007 | 112 | 2 | 351-356
Article title

Growth and Properties of ZnMnTe Nanowires

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Catalytically enhanced growth of ZnMnTe diluted magnetic semiconductor nanowires by molecular beam epitaxy is reported. The growth is based on the vapor-liquid-solid mechanism and was performed on (001) and (011)-oriented GaAs substrates from elemental sources. X-ray diffractometry, scanning and transmission electron microscopy, atomic force microscopy, photoluminescence spectroscopy, and Raman scattering were performed to determine the structure of nanowires, their chemical composition, and morphology. These studies revealed that the obtained ZnMnTe nanowires possess zinc-blende structure, have an average diameter of about 30 nm, typical length between 1 and 2μm and that Mn^{2+} ions were incorporated into substitutional sites of the ZnTe crystal lattice.
Physical description
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