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Abstracts
We present results of deep-level transient spectroscopy investigations of defects in a GaN-based heterostructure of a blue-violet laser diode, grown by plasma-assisted molecular beam epitaxy on a bulk GaN substrate. Three majority-carrier traps, T1 at E_C - 0.28 eV, T2 at E_C - 0.60 eV, and T3 at E_V + 0.33 eV, were revealed in deep-level transient spectra measured under reverse-bias conditions. On the other hand, deep-level transient spectroscopy measurements performed under injection conditions, revealed one minority-carrier trap, T4, with the activation energy of 0.20 eV. The three majority-carrier traps were revealed in the spectra measured under different reverse-bias conditions, suggesting that they are present in various parts of the laser-diode heterostructure. In addition, these traps represent different charge-carrier capture behaviours. The T1 trap, which exhibits logarithmic capture kinetics, is tentatively attributed to electron states of dislocations in the n-type wave-guiding layer of the structure. In contrast, the T2, T3, and T4 traps display exponential capture kinetics and are assigned to point defects.
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Journal
Year
Volume
Issue
Pages
331-337
Physical description
Dates
published
2007-08
received
2007-06-09
Contributors
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of High Pressure Physics"Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
author
- Institute of High Pressure Physics"Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
author
- Institute of High Pressure Physics"Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv112n234kz