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Abstracts
We report on a simple experiment on temperature-dependent Hall effect measurements in GaMnAs single crystalline samples with Mn composition estimated at 0.05-0.3 at.% which is slightly below the onset of ferromagnetism. Impurity band transport is visible for Mn compositions of ≈0.3 at.% as a clear metallic behaviour. The results show an interesting situation that the metal-insulator transition in GaAs:Mn occurs within the impurity band which is separated from the valence bands for Mn concentrations studied here. We also discuss on the equilibrium high temperature solubility limit of Mn in GaAs, unknown precisely in the literature.
Discipline
- 72.80.Ey: III-V and II-VI semiconductors
- 71.30.+h: Metal-insulator transitions and other electronic transitions
- 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)
- 75.50.Pp: Magnetic semiconductors
Journal
Year
Volume
Issue
Pages
325-330
Physical description
Dates
published
2007-08
received
2007-06-09
Contributors
author
- Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
- Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
- Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv112n233kz