Hole Transport in Impurity Band and Valence Bands Studied in Moderately Doped GaAs:Mn Single Crystals

• Authors: T. Słupiński , J. Caban , K. Moskalik
• Languages of publication: EN

Abstracts

EN

We report on a simple experiment on temperature-dependent Hall effect measurements in GaMnAs single crystalline samples with Mn composition estimated at 0.05-0.3 at.% which is slightly below the onset of ferromagnetism. Impurity band transport is visible for Mn compositions of ≈0.3 at.% as a clear metallic behaviour. The results show an interesting situation that the metal-insulator transition in GaAs:Mn occurs within the impurity band which is separated from the valence bands for Mn concentrations studied here. We also discuss on the equilibrium high temperature solubility limit of Mn in GaAs, unknown precisely in the literature.

Keywords

EN

75.50.Pp; 71.30.+h; 72.80.Ey; 61.72.-y

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 71.30.+h: Metal-insulator transitions and other electronic transitions
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)
• 75.50.Pp: Magnetic semiconductors

• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 2
• Pages: 325-330

Dates

published

2007-08

received

2007-06-09

Contributors

author

T. Słupiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

J. Caban

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

K. Moskalik

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.112.325