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2007 | 112 | 2 | 325-330
Article title

Hole Transport in Impurity Band and Valence Bands Studied in Moderately Doped GaAs:Mn Single Crystals

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EN
Abstracts
EN
We report on a simple experiment on temperature-dependent Hall effect measurements in GaMnAs single crystalline samples with Mn composition estimated at 0.05-0.3 at.% which is slightly below the onset of ferromagnetism. Impurity band transport is visible for Mn compositions of ≈0.3 at.% as a clear metallic behaviour. The results show an interesting situation that the metal-insulator transition in GaAs:Mn occurs within the impurity band which is separated from the valence bands for Mn concentrations studied here. We also discuss on the equilibrium high temperature solubility limit of Mn in GaAs, unknown precisely in the literature.
Keywords
Year
Volume
112
Issue
2
Pages
325-330
Physical description
Dates
published
2007-08
received
2007-06-09
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv112n233kz
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