Journal
Article title
Title variants
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Abstracts
An optical pump - terahertz probe technique was used for measuring electron lifetime in various Ga_{1-x}Mn_xAs epitaxial layers with the subpicosecond temporal resolution. The measurements were performed on the samples with x up to 2%, which had large resistivities and were transparent in a THz frequency range. It has been found that an induced THz absorption relaxation is the fastest and electron lifetimes are the shortest for the samples with the smallest Mn content. For the samples with x=0.3% and x=2% this relaxation becomes much slower; its rate is comparable to the carrier recombination rate in Ga_{1-x}Mn_xAs substrate.
Discipline
- 07.57.Hm: Infrared, submillimeter wave, microwave, and radiowave sources(see also 42.72.Ai Infrared sources in optics)
- 42.65.Re: Ultrafast processes; optical pulse generation and pulse compression(for ultrafast spectroscopy, see 78.47.J-; for ultrafast magnetization dynamics, see 75.78.Jp)
- 75.50.Pp: Magnetic semiconductors
Journal
Year
Volume
Issue
Pages
311-314
Physical description
Dates
published
2007-08
received
2007-06-09
Contributors
author
- Semiconductor Physics Institute, A. Gostauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Gostauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Gostauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Gostauto 11, 01108 Vilnius, Lithuania
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
References
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- 6. J. Sadowski, J.Z. Domagala, Phys. Rev. B, 69, 075206, 2004
- 7. M. Kaminska, Phys. Scr., T19B, 551, 1987
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv112n230kz