Optical Pump - Terahertz Probe Measurement of the Electron Dynamics in Ga_{1-x}Mn_xAs

• Authors: R. Šustavičiūtė , S. Balakauskas , R. Adomavičius , A. Krotkus , J. Sadowski
• Languages of publication: EN

Abstracts

EN

An optical pump - terahertz probe technique was used for measuring electron lifetime in various Ga_{1-x}Mn_xAs epitaxial layers with the subpicosecond temporal resolution. The measurements were performed on the samples with x up to 2%, which had large resistivities and were transparent in a THz frequency range. It has been found that an induced THz absorption relaxation is the fastest and electron lifetimes are the shortest for the samples with the smallest Mn content. For the samples with x=0.3% and x=2% this relaxation becomes much slower; its rate is comparable to the carrier recombination rate in Ga_{1-x}Mn_xAs substrate.

Keywords

EN

42.65.Re; 07.57.Hm; 78.47.+p; 75.50.Pp

Discipline

• 07.57.Hm: Infrared, submillimeter wave, microwave, and radiowave sources(see also 42.72.Ai Infrared sources in optics)
• 42.65.Re: Ultrafast processes; optical pulse generation and pulse compression(for ultrafast spectroscopy, see 78.47.J-; for ultrafast magnetization dynamics, see 75.78.Jp)
• 75.50.Pp: Magnetic semiconductors

• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 2
• Pages: 311-314

Dates

published

2007-08

received

2007-06-09

Contributors

author

R. Šustavičiūtė

• Semiconductor Physics Institute, A. Gostauto 11, 01108 Vilnius, Lithuania

author

S. Balakauskas

• Semiconductor Physics Institute, A. Gostauto 11, 01108 Vilnius, Lithuania

author

R. Adomavičius

• Semiconductor Physics Institute, A. Gostauto 11, 01108 Vilnius, Lithuania

author

A. Krotkus

• Semiconductor Physics Institute, A. Gostauto 11, 01108 Vilnius, Lithuania

author

J. Sadowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. T. Jungwirth, K.Y. Wang, J. Masek, K.W. Edmonds, Jurgen Konig, Jairo Sinova, M. Polini, N.A. Goncharuk, A.H. MacDonald, M. Sawicki, A.W. Rushforth, R.P. Campion, L.X. Zhao, C.T. Foxon, B.L. Gallagher, Phys. Rev. B, 72, 165204, 2005
• 2. T. Dietl, Semicond. Sci. Technol., 17, 377, 2002
• 3. A. Krotkus, J.L. Coutaz, Semicond. Sci. Technol., 20, S142, 2005
• 4. S. Kim, E. Oh, J.U. Lee, D.S. Kim, S. Lee, J.K. Furdyna, Appl. Phys. Lett., 88, 262101, 2006
• 5. J. Sadowski, J.Z. Domagala, J. Bak-Misiuk, S. Kolesnik, M. Sawicki, K. Swiatek, J. Kanski, L. Ilver, V. Strom, J. Vac. Sci. Technol. B, 18, 1697, 2000
• 6. J. Sadowski, J.Z. Domagala, Phys. Rev. B, 69, 075206, 2004
• 7. M. Kaminska, Phys. Scr., T19B, 551, 1987

Identifiers

DOI

10.12693/APhysPolA.112.311