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2007 | 112 | 2 | 255-260
Article title

Mechanical and Electrical Properties, of ZnO-Nanowire/Si-Substrate Junctions Studied by Scanning Probe Microscopy

Content
Title variants
Languages of publication
EN
Abstracts
EN
Scanning tunneling spectroscopy was used to check the tunneling I-V characteristics of junctions formed by n-ZnO nanowires deposited on Si substrates with n- and p-type electrical conductivity (i.e. n-ZnO nanowire/n-Si and n-ZnO nanowire/p-Si junctions, respectively). Simultaneously, several phenomena which influence the measured I-V spectra were studied by atomic force microscopy. These influencing factors are: the deposition density of the nanowires, the possibility of surface modification by tip movement (difference in attraction forces between nanowires and the p-Si and n-Si) and the aging of the surface.
Keywords
Year
Volume
112
Issue
2
Pages
255-260
Physical description
Dates
published
2007-08
received
2007-06-09
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv112n221kz
Identifiers
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