Current Fluctuations in Single Barrier Vertical GaAs/AlAs/GaAs Tunneling Devices

• Authors: J. Przybytek , M. Baj
• Languages of publication: EN

Abstracts

EN

We report the experimental results of the low temperature (T = 4.2 K) low-frequency current fluctuations measurements in the single-barrier resonant tunneling GaAs/AlAs/GaAs device with Siδ-doping in the center of the 10 nm thick AlAs barrier. The dimensions of the device were 200μm by 200μm. For the biasing voltages 0.1 V<|U|<1 V we observed the Fano factors between F = 0.7 and F = 0.95. We explain it by the existence of the trapping centers/imperfections/resonant levels inside the barrier participating in the transport for this range of voltages. Only for the smallest biasing voltages the Fano factor tends to F = 1, expected for a highly nontransparent barrier.

Keywords

EN

73.50.Td; 73.40.Gk; 73.43.Jn

Discipline

• 73.43.Jn: Tunneling
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)
• 73.50.Td: Noise processes and phenomena

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 2
• Pages: 221-226

Dates

published

2007-08

received

2007-06-09

Contributors

author

J. Przybytek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

M. Baj

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.112.221