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2007 | 112 | 2 | 221-226
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Current Fluctuations in Single Barrier Vertical GaAs/AlAs/GaAs Tunneling Devices

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We report the experimental results of the low temperature (T = 4.2 K) low-frequency current fluctuations measurements in the single-barrier resonant tunneling GaAs/AlAs/GaAs device with Siδ-doping in the center of the 10 nm thick AlAs barrier. The dimensions of the device were 200μm by 200μm. For the biasing voltages 0.1 V<|U|<1 V we observed the Fano factors between F = 0.7 and F = 0.95. We explain it by the existence of the trapping centers/imperfections/resonant levels inside the barrier participating in the transport for this range of voltages. Only for the smallest biasing voltages the Fano factor tends to F = 1, expected for a highly nontransparent barrier.
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
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