EN
Photoluminescence measurements were carried out on Be δ-doped GaAs/Al_{0.33}Ga_{0.67}As heterostructure at 1.6 K in magnetic fields (B) up to 4 T. Luminescence originating from recombination of a two-dimensional electron gas and photoexcited holes localized on Be acceptors was analyzed. The degree of circular polarization (γ_C) of the luminescence from fully occupied Landau levels was determined as a function of B and the two-dimensional electron gas concentration, n_s. At B constant,γ_C decreased with the increase in n_s. The intensity of the optical transition considered was calculated with taking into account s- and d-like parts of the acceptor envelope function. It is shown that the presence of the d-like part explains the observed γ_C(n_s) dependence quantitatively. This shows that polarization spectroscopy on acceptorδ-doped heterostructures enables one to test experimentally the contribution of the L>0 component of the envelope in a shallow acceptor description.