Electronic Band Structure of In_xGa_{1-x}N under Pressure

• Authors: I. Gorczyca , N. Christensen , A. Svane , K. Laaksonen , R. Nieminen
• Languages of publication: EN

Abstracts

EN

The electronic band structures of zinc-blende In_xGa_{1-x}N alloys with x varying from 0.03 to 0.5 are examined within the density functional theory. The calculations, including structural optimizations, are performed by means of the full-potential linear muffin-tin-orbital and pseudopotential methods. The effects of varying the composition, x, and of applying external pressure are studied. A composition-dependent band gap bowing parameter in the range of 1.6-2 eV is obtained. A strong nonlinearity in the composition dependence of the pressure coefficient of the band gap is found.

Keywords

EN

71.15.Mb; 71.55.Eq; 71.20.-b

Discipline

• 71.20.-b: Electron density of states and band structure of crystalline solids
• 71.55.Eq: III-V semiconductors
• 71.15.Mb: Density functional theory, local density approximation, gradient and other corrections

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 2
• Pages: 203-208

Dates

published

2007-08

received

2007-06-09

Contributors

author

I. Gorczyca

• Institute of High Pressure Physics, "Unipress", Sokołowska 29/37, 01-142 Warsaw, Poland

author

N. Christensen

• Department of Physics and Astronomy, University of Aarhus, 8000 Aarhus C, Denmark

author

A. Svane

• Department of Physics and Astronomy, University of Aarhus, 8000 Aarhus C, Denmark

author

K. Laaksonen

• Laboratory of Physics, Helsinki University of Technology, 02015 HUT, Finland

author

R. Nieminen

• Laboratory of Physics, Helsinki University of Technology, 02015 HUT, Finland

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Identifiers

DOI

10.12693/APhysPolA.112.203