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2007 | 112 | 2 | 203-208
Article title

Electronic Band Structure of In_xGa_{1-x}N under Pressure

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EN
Abstracts
EN
The electronic band structures of zinc-blende In_xGa_{1-x}N alloys with x varying from 0.03 to 0.5 are examined within the density functional theory. The calculations, including structural optimizations, are performed by means of the full-potential linear muffin-tin-orbital and pseudopotential methods. The effects of varying the composition, x, and of applying external pressure are studied. A composition-dependent band gap bowing parameter in the range of 1.6-2 eV is obtained. A strong nonlinearity in the composition dependence of the pressure coefficient of the band gap is found.
Keywords
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Contributors
author
  • Institute of High Pressure Physics, "Unipress", Sokołowska 29/37, 01-142 Warsaw, Poland
  • Department of Physics and Astronomy, University of Aarhus, 8000 Aarhus C, Denmark
author
  • Department of Physics and Astronomy, University of Aarhus, 8000 Aarhus C, Denmark
author
  • Laboratory of Physics, Helsinki University of Technology, 02015 HUT, Finland
author
  • Laboratory of Physics, Helsinki University of Technology, 02015 HUT, Finland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv112n212kz
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