Optical Absorption and Reflection Studies of Tl_4InGa_3S_8 Layered Single Crystals

• Authors: K. Goksen , N. Gasanly , H. Ozkan
• Languages of publication: EN

Abstracts

EN

The optical properties of Tl_4InGa_3S_8 layered single crystals have been studied by means of transmission and reflection measurements in the wavelength region between 400 and 1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.40 and 2.61 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed the rate of change of the indirect band gap with temperature asγ=-6.0×10^{-4} eV/K. The absolute zero value of the band gap energy was obtained as E_{gi}(0)= 2.52 eV. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength, and zero-frequency refractive index were found to be 5.07 eV, 26.67 eV, 8.82×10^{13} m^{-2}, and 2.50, respectively.

Keywords

EN

78.20.Ci; 78.40.-q; 78.40.Fy

Discipline

• 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
• 78.40.-q: Absorption and reflection spectra: visible and ultraviolet(for infrared spectra, see 78.30.-j; for optical spectra of superconductors, see 74.25.nd; for time resolved reflection spectroscopy, see 78.47.jg; for multiphoton absorption, see 79.20.Ws in impact phenomena)
• 78.40.Fy: Semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 1
• Pages: 93-100

Dates

published

2007-07

received

2007-05-10

Contributors

author

K. Goksen

• Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

author

N. Gasanly

• Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

author

H. Ozkan

• Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

References

• 1. D. Muller, H. Hahn, Z. Anorg. Allg. Chem., 438, 258, 1978
• 2. K.A. Yee, A. Albright, J. Am. Chem. Soc., 113, 6474, 1991
• 3. M. Hanias, A. Anagnostopoulos, K. Kambas, J. Spyridelis, Mater. Res. Bull., 27, 25, 1992
• 4. A. Kato, M. Nishigaki, N. Mamedov, M. Yamazaki, S. Abdullaeva, E. Kerimova, H. Uchiki, S. Iida, J. Phys. Chem. Solids, 64, 1713, 2003
• 5. I.M. Ashraf, J. Phys. Chem., 108, 10765, 2004
• 6. O. Karabulut, M. Parlak, G.M. Mamedov, J. Alloys Comp., 429, 50, 2007
• 7. S. Kashida, Y. Yanadori, Y. Otaki, Y. Seki, A.M. Panich, Phys. Status Solidi A, 203, 2666, 2006
• 8. K.R. Allakhverdiev, Solid State Commun., 111, 253, 1999
• 9. K. Goksen, N.M. Gasanly, H. Ozkan, J. Phys., Condens. Matter, 19, 256210, 2007
• 10. J.I. Pankove, Optical Processes in Semiconductors, Prentice-Hall, New Jersey 1971
• 11. J.R. Drabble, H.J. Goldsmid, Thermal Conduction in Semiconductors, Pergamon, Oxford 1961
• 12. J.A. Kalomiros, A. Anagnostopoulos, Phys. Rev. B, 50, 7488, 1994
• 13. A.F. Qasrawi, N.M. Gasanly, Phys. Status Solidi A, 202, 2501, 2005
• 14. S.H. Wemple, M. DiDomenico, Phys. Rev. B, 3, 1338, 1971
• 15. S.H. Wemple, M. DiDomenico, Phys. Rev. Lett., 23, 1156, 1969
• 16. M.M. El-Nahass, M.M. Sallam, S.A. Rahman, E.M. Ibrahim, Solid State Sci., 8, 488, 2006
• 17. K. Tanaka, Thin Solid Films, 66, 271, 1980
• 18. F. Yakuphanoglu, A. Cukurovali, I. Yilmaz, Physica B, 351, 53, 04; Physica B, 353, 210, 2004
• 19. E. Marguez, P. Nagels, J.M. Gonzalez-Leal, A.M. Bernal-Oliva, E. Sleeckx, R. Callaerts, Vacuum, 52, 55, 1999
• 20. E. Marguez, A.M. Bernal-Oliva, J.M. Gonzalez-Leal, R. Pricto-Alcon, A. Ledesma, R. Jimenez-Garay, I. Martil, Mater. Chem. Phys., 60, 231, 1999
• 21. A.K. Walton, T.S. Moss, Proc. Phys. Soc., 81, 509, 1963
• 22. M.M. El-Nahass, A.M.M. Farag, E.M. Ibrahim, S.A. Rahman, Vacuum, 72, 453, 2004

Identifiers

DOI

10.12693/APhysPolA.112.93