Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays

• Authors: A. Janavičius , J. Storasta , R. Purlys , A. Mekys , S. Balakauskas , Ž. Norgėla
• Languages of publication: EN

Abstracts

EN

We applied soft X-rays for investigation of dynamics of the Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states produced in the lattice after ejection of the Auger electrons. The irradiated irregularities and defects of the lattice cause a change of the Bragg reflection maxima. Several resonance phenomena are related to metastable states introduced into Si crystal by soft X-rays irradiation. The resonance of mean square displacements of Si atoms in the lattice and the resonance of the Hall mobility after irradiation are obtained and considered.

Keywords

EN

61.72.-y; 61.72.Dd; 05.50.+q

Discipline

• 61.72.Dd: Experimental determination of defects by diffraction and scattering
• 05.50.+q: Lattice theory and statistics (Ising, Potts, etc.)(see also 64.60.Cn Order-disorder transformations, and 75.10.Hk Classical spin models)
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 1
• Pages: 55-68

Dates

published

2007-07

received

2007-04-30

Contributors

author

A. Janavičius

• Šiauliai University, Faculty of Nature, P. Višinskio 25, 76351 Šiauliai, Lithuania

author

J. Storasta

• Faculty of Physics, Vilnius University, Saulėtekio 9, 10222 Vilnius, Lithuania

author

R. Purlys

• Faculty of Physics, Vilnius University, Saulėtekio 9, 10222 Vilnius, Lithuania

author

A. Mekys

• Faculty of Physics, Vilnius University, Saulėtekio 9, 10222 Vilnius, Lithuania

author

S. Balakauskas

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania

author

Ž. Norgėla

• Šiauliai University, Faculty of Nature, P. Višinskio 25, 76351 Šiauliai, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.112.55