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2007 | 112 | 1 | 29-40
Article title

Amplitude Modulation and Demodulation in Strain Dependent Diffusive Semiconductors

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EN
Abstracts
EN
In communication processes, amplitude modulation is very helpful to save power by using a single band transmission. Thus in this paper authors have explored the possibility of amplitude modulation as well as demodulation of an electromagnetic wave in a transversely magnetized electrostrictive semiconductor. The inclusion of carrier diffusion and phenomenological damping coefficient in the nonlinear laser-semiconductor plasma interaction adds a new dimension to the analysis present in this paper. This problem is analyzed in different wave number regimes over a wide range of cyclotron frequencies. It is found that the complete absorption of the waves takes place in all the possible wavelength regimes when the cyclotron frequency (ω_c) becomes exactly equal to (ν^2+ω_0^2)^{1/2} in absence of damping parameter. It has also been seen that diffusion of charge carriers modifies amplitude modulation and demodulation processes significantly. The damping parameter plays a very important role in deciding the parameter range and selecting the side band mode that will be modulated by the above-mentioned interaction.
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EN
Year
Volume
112
Issue
1
Pages
29-40
Physical description
Dates
published
2007-07
received
2006-05-29
(unknown)
2007-05-22
References
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Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv112n104kz
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