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2007 | 111 | 6 | 835-846
Article title

Optoelectronic Device Based on Gunn Effect Extended Diode Structure

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EN
Abstracts
EN
We discuss the possibility of light control by means of light diffraction by space charge waves which are the periodic domain trains induced at some circumstances in GaAs Gunn effect diode. The two possible regimes of the proposed device are considered: the first one which is analogous to the Bragg diffraction in case of light-acoustic diffraction and the other one, which we call "intermediate", since the parameter Q which distinguishes the Raman-Nath (Q<1) and the Bragg diffraction (Q>10), in this case is≈1 (actually, only bit smaller than 1). Among the advantages of this hypothetical device are the simpler control of operation and perhaps, possibility to couple it with the waveguides and switchers for surface electromagnetic waves and other miniaturized photonic circuits.
Keywords
Year
Volume
111
Issue
6
Pages
835-846
Physical description
Dates
published
2007-06
received
2006-09-11
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv111n603kz
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