EN
We calculated the differential conductance G as the function of the bias voltage V across the tunnel junction between a normal metal or a conventional superconductor and an inhomogeneous superconductor with charge density waves. Spatial averaging over random domains with varying superconducting and normal state properties was carried out. For high-T_c oxides, irregularly distorted charge density wave patterns with spatially scattered values of various parameters were earlier shown to manifest themselves in a great body of experimental data. The results of calculation were applied to explain the well-known dip-hump structure in the G(V) dependence for Bi_2Sr_2CaCu_2O_{8+δ} and other cuprates.