Charge-Density-Wave Origin of Dip-Hump Structures in the Tunnel Spectra of Bi_2Sr_2CaCu_2O_{8+δ}

• Authors: T. Ekino , A. Gabovich , M. Li , M. Pękała , H. Szymczak , A. Voitenko
• Languages of publication: EN

Abstracts

EN

We calculated the differential conductance G as the function of the bias voltage V across the tunnel junction between a normal metal or a conventional superconductor and an inhomogeneous superconductor with charge density waves. Spatial averaging over random domains with varying superconducting and normal state properties was carried out. For high-T_c oxides, irregularly distorted charge density wave patterns with spatially scattered values of various parameters were earlier shown to manifest themselves in a great body of experimental data. The results of calculation were applied to explain the well-known dip-hump structure in the G(V) dependence for Bi_2Sr_2CaCu_2O_{8+δ} and other cuprates.

Keywords

EN

73.43.Jn; 71.45.Lr; 74.50.+r; 74.81.-g

Discipline

• 74.81.-g: Inhomogeneous superconductors and superconducting systems, including electronic inhomogeneities
• 74.50.+r: Tunneling phenomena; Josephson effects(for SQUIDs, see 85.25.Dq; for Josephson devices, see 85.25.Cp; for Josephson junction arrays, see 74.81.Fa)
• 71.45.Lr: Charge-density-wave systems(see also 75.30.Fv Spin-density waves)
• 73.43.Jn: Tunneling

• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 111
• Issue: 4
• Pages: 573-580

Dates

published

2007-04

received

2006-09-14

Contributors

author

T. Ekino

• Hiroshima University, Faculty of Integrated Arts and Sciences, Higashi-Hiroshima, 739-8521, Japan

author

A. Gabovich

• Institute of Physics, Nauki Ave. 46, 03028 Kiev, Ukraine

author

M. Li

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Pękała

• Department of Chemistry, Warsaw University, al.Żwirki i Wigury 101, 02-089 Warsaw, Poland

author

H. Szymczak

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Voitenko

• Institute of Physics, Nauki Ave. 46, 03028 Kiev, Ukraine

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Identifiers

DOI

10.12693/APhysPolA.111.573